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K7S3236T4C 데이터시트 PDF




Samsung semiconductor에서 제조한 전자 부품 K7S3236T4C은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 K7S3236T4C 기능
기능 1Mx36 & 2Mx18 QDRTM II b4 SRAM
제조업체 Samsung semiconductor
로고 Samsung semiconductor 로고


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K7S3236T4C 데이터시트, 핀배열, 회로
K7S3236T4C
K7S3218T4C
1Mx36 & 2Mx18 QDRTM II+ b4 SRAM
36Mb QDRII+ SRAM Specification
165 FBGA with Pb & Pb-Free
(RoHS compliant)
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY.
ALL INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or simi-
lar applications where Product failure could result in loss of life or personal or physical harm, or any military
or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
www.DataSheet4U.com
- 1 - Rev. 1.2 March 2007




K7S3236T4C pdf, 반도체, 판매, 대치품
K7S3236T4C
K7S3218T4C
1Mx36 & 2Mx18 QDRTM II+ b4 SRAM
PIN CONFIGURATIONS(TOP VIEW) K7S3236T4C (1Mx36)
1 2 3 4 5 6 7 8 9 10 11
A
CQ NC/SA* NC/SA*
W
BW2
K
BW1
R
SA NC/SA* CQ
B Q27 Q18 D18 SA BW3 K BW0 SA D17 Q17 Q8
C D27 Q28 D19 VSS
SA
NC
SA
VSS D16
Q7
D8
D D28 D20 Q19 VSS VSS VSS VSS VSS Q16 D15 D7
E
Q29
D29
Q20
VDDQ
VSS
VSS
VSS VDDQ Q15
D6
Q6
F
Q30
Q21
D21
VDDQ
VDD
VSS
VDD
VDDQ
D14
Q14
Q5
G
D30
D22
Q22
VDDQ
VDD
VSS
VDD
VDDQ
Q13
D13
D5
H
Doff
VREF
VDDQ
VDDQ
VDD
VSS
VDD
VDDQ
VDDQ
VREF
ZQ
J
D31
Q31
D23
VDDQ
VDD
VSS
VDD
VDDQ
D12
Q4
K
Q32
D32
Q23
VDDQ
VDD
VSS
VDD
VDDQ
Q12
D3
D4
Q3
L
Q33
Q24
D24
VDDQ
VSS
VSS
VSS VDDQ D11
Q11
Q2
M D33 Q34 D25 VSS VSS VSS VSS VSS D10 Q1
N D34 D26 Q25 VSS
SA
SA
SA
VSS Q10
D9
D2
D1
P Q35 D35 Q26
SA
SA QVLD SA
SA
Q9
D0
Q0
R TDO TCK
SA
SA
SA
NC
SA
SA
SA TMS TDI
Notes : 1. * Checked No Connect(NC) pins are reserved for higher density address, i.e. 3A for 72Mb, 10A for 144Mb and 2A for 288Mb.
2. BW0 controls write to D0:D8, BW1 controls write to D9:D17, BW2 controls write to D18:D26 and BW3 controls write to D27:D35.
PIN NAME
SYMBOL
K, K
QVLD
CQ, CQ
Doff
SA
D0-35
PIN NUMBERS
6B, 6A
6P
11A, 1A
1H
9A,4B,8B,5C,7C,5N-7N,4P,5P,7P,8P,3R-5R,7R-9R
10P,11N,11M,10K,11J,11G,10E,11D,11C,10N,9M,9L
9J,10G,9F,10D,9C,9B,3B,3C,2D,3F,2G,3J,3L,3M,2N
1C,1D,2E,1G,1J,2K,1M,1N,2P
DESCRIPTION
Input Clock
Q Valid output
Output Echo Clock
DLL Disable
Address Inputs
Data Inputs
NOTE
Q0-35
11P,10M,11L,11K,10J,11F,11E,10C,11B,9P,9N,10L
9K,9G,10F,9E,9D,10B,2B,3D,3E,2F,3G,3K,2L,3N
3P,1B,2C,1E,1F,2J,1K,1L,2M,1P
Data Outputs
W 4A
R 8A
BW0, BW1,BW2, BW3
7B,7A,5A,5B
VREF
2H,10H
ZQ 11H
VDD 5F,7F,5G,7G,5H,7H,5J,7J,5K,7K
VDDQ
4E,8E,4F,8F,4G,8G,3H,4H,8H,9H,4J,8J,4K,8K,4L,8L
VSS 4C,8C,4D-8D,5E-7E,6F,6G,6H,6J,6K,5L-7L,4M,8M,4N,8N
TMS
10R
TDI 11R
TCK
2R
TDO
1R
NC 2A,3A,10A,6C,6R
Write Control Pin,active when low
Read Control Pin,active when low
Block Write Control Pin,active when low
Input Reference Voltage
Output Driver Impedance Control Input
Power Supply (1.8 V)
Output Power Supply (1.5V)
Ground
JTAG Test Mode Select
JTAG Test Data Input
JTAG Test Clock
JTAG Test Data Output
No Connect
1
2
www.DataNSohteese:1t.4WUh.ecnoZmQ pin is directly connected to VDD output impedance is set to minimum value and it cannot be connected to ground or left unconnected.
2. Not connected to chip pad internally.
3. K, K can not be set to VREF voltage.
- 4 - Rev. 1.2 March 2007

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K7S3236T4C 전자부품, 판매, 대치품
K7S3236T4C
K7S3218T4C
1Mx36 & 2Mx18 QDRTM II+ b4 SRAM
Depth Expansion
Separate input and output ports enables easy depth expansion. Each port can be selected and deselected independently and read
and write operation do not affect each other. Before chip deselected, all read and write pending operations are completed.
Programmable Impedance Output Buffer Operation
The designer can program the SRAM's output buffer impedance by terminating the ZQ pin to VSS through a precision resistor(RQ).
The allowable range of RQ is between 175and 350The value of RQ (within 15% tolerance) is five times the output impedance
desired. For example, 250resistor will give an output impedance of 50.
Impedance updates occur early in cycles that do not activate the outputs, such as deselect cycles. In all cases impedance updates
are transparent to the user and do not produce access time "push-outs" or other anomalous behavior in the SRAM. To guarantee
optimum output driver impedance after power up, the SRAM needs 1024 non-read cycles.
Output Valid Pin (QVLD)
The Q Valid indicates valid output data. QVLD is activated half cycle before the read data for the receiver to be ready for capturing
the data. QVLD is edge aligned with CQ and CQ.
Echo clock operation
To assure the output traceability, the SRAM provides the output Echo clock, pair of compliment clock CQ and CQ, which are syn-
chronized with internal data output. Echo clocks run free during normal operation.
The Echo clock is triggered by internal output clock signal, and transferred to external through same structures as output driver.
Power-Up/Power-Down Supply Voltage Sequencing
The following power-up supply voltage application is recommended: VSS, VDD, VDDQ, VREF, then VIN. VDD and VDDQ can be applied
simultaneously, as long as VDDQ does not exceed VDD by more than 0.5V during power-up. The following power-down supply voltage
removal sequence is recommended: VIN, VREF, VDDQ, VDD, VSS. VDD and VDDQ can be removed simultaneously, as long as VDDQ
does not exceed VDD by more than 0.5V during power-down.
www.DataSheet4U.com
- 7 - Rev. 1.2 March 2007

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관련 데이터시트

부품번호상세설명 및 기능제조사
K7S3236T4C

(K7S3236T4C / K7S3218T4C) 1Mx36 & 2Mx18 QDRTM II b4 SRAM

Samsung semiconductor
Samsung semiconductor
K7S3236T4C

1Mx36 & 2Mx18 QDRTM II b4 SRAM

Samsung semiconductor
Samsung semiconductor

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