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KA100O015E-BJTT 데이터시트 PDF




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부품번호 KA100O015E-BJTT 기능
기능 2CKE DDP Mobile DDR SDRAM
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KA100O015E-BJTT 데이터시트, 핀배열, 회로
Rev. 1.0, Jul. 2010
KA100O015E-BJTT
MCP Specification
4Gb (256M x16) NAND Flash
+ 4Gb (64M x32 + 64M x32) 2/CS,2CKE DDP Mobile DDR SDRAM
datasheet
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND
SPECIFICATIONS WITHOUT NOTICE.
Products and specifications discussed herein are for reference purposes only. All information discussed
herein is provided on an "AS IS" basis, without warranties of any kind.
This document and all information discussed herein remain the sole and exclusive property of Samsung
Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property
right is granted by one party to the other party under this document, by implication, estoppel or other-
wise.
Samsung products are not intended for use in life support, critical care, medical, safety equipment, or
similar applications where product failure could result in loss of life or personal or physical harm, or any
military or defense application, or any governmental procurement to which special terms or provisions
may apply.
For updates or additional information about Samsung products, contact your nearest Samsung office.
www.DataSAhlel berta4nUd.cnoammes, trademarks and registered trademarks belong to their respective owners.
2010 Samsung Electronics Co., Ltd. All rights reserved.
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KA100O015E-BJTT pdf, 반도체, 판매, 대치품
KA100O015E-BJTT
datasheet
Rev. 1.0
MCP Memory
2. GENERAL DESCRIPTION
The KA100O015E is a Multi Chip Package Memory which combines 4G bit NAND Flash Memory and 4G bit DDP synchronous high data rate Dynamic
RAM.
NAND cell provides the most cost-effective solution for the solid state application market. A program operation can be performed in typical 420μs(TBD) on
the (2K+64)Word page and an erase operation can be performed in typical 3ms(TBD) on a (128K+4K)Word block. Data in the data register can be read
out at 42ns cycle time per Word. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller
automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-
intensive systems can take advantage of the devices extended reliability of TBD program/erase cycles by providing ECC(Error Correcting Code) with real
time mapping-out algorithm. The device is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.
In 4G bit DDP Mobile DDR, Synchronous design make a device controlled precisely with the use of system clock. Range of operating frequencies, pro-
grammable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory sys-
tem applications.
The KA100O015E is suitable for use in data memory of mobile communication system to reduce not only mount area but also power consumption. This
device is available in 137-ball FBGA Type.
www.DataSheet4U.com
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KA100O015E-BJTT 전자부품, 판매, 대치품
KA100O015E-BJTT
datasheet
Rev. 1.0
MCP Memory
5. ORDERING INFORMATION
KA 1 00 O 0 15 E - B J T T
Samsung
MCP Memory(3chips)
Device Type
1 : NAND + SDRAM + SDRAM
NOR Flash Density,Voltage,
Organization
00 : None
NAND Density, Voltage,
Organization
O : 4G NAND, 1.8V/1.8, x16
UtRAM Density, Voltage, Organization
0 : None
Mobile DDR Speed
T : 5ns (200Mhz@CL3)
Mobile DDR Speed
T : 5ns (200Mhz@CL3)
NAND Flash Speed
J : 42ns
Package(Pad finish+pb-free)
B : FBGA(HF,OSP LF)
Version
E : 6th Generation
DRAM Interface, Density, Voltage, Organization
15: MDDR*2, 2Gb*2, 1.8V/1.8V, x32(2/CS,2CK)
www.DataSheet4U.com
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부품번호상세설명 및 기능제조사
KA100O015E-BJTT

2CKE DDP Mobile DDR SDRAM

Samsung semiconductor
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