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Número de pieza | DE275-101N30A | |
Descripción | RF Power MOSFET | |
Fabricantes | IXYS Corporation | |
Logotipo | ||
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No Preview Available ! DE275-101N30A
RF Power MOSFET
N-Channel Enhancement Mode
Low Qg and Rg
High dv/dt
Nanosecond Switching
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
dv/dt
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
Tc = 25°C
Tc = 25°C, pulse width limited by TJM
Tc = 25°C
Tc = 25°C
IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS,
Tj ≤ 150°C, RG = 0.2Ω
IS = 0
Maximum Ratings
100 V
100 V
±20 V
±30 V
30.0 A
240 A
TBD
A
TBD mJ
5.5 V/ns
>200 V/ns
VDSS = 100 V
ID25 = 30.0 A
RDS(on) ≤ 0.06 Ω
PDC = 550 W
PDC
PDHS
PDAMB
RthJC
RthJHS
Tc = 25°C
Derate 4.4W/°C above 25°C
Tc = 25°C
550 W
270 W
3.5
0.25
0.53
W
C/W
C/W
GATE
SG1 SG2
DRAIN
SD1 SD2
Symbol Test Conditions
Characteristic Values
TJ = 25°C unless otherwise specified
min. typ.
max.
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
VDSS
VGS = 0 V, ID = 3 ma
100
V − Increased temperature and power
cycling capability
VGS(th)
IGSS
IDSS
VDS = VGS, ID = 250 µa
VGS = ±20 VDC, VDS = 0
VDS = 0.8 VDSS TJ = 25°C
VGS = 0
TJ = 125°C
2 2.5
4 V • IXYS advanced low Qg process
±100
nA
• Low gate charge and capacitances
− easier to drive
25
250
µA − faster switching
µA • Low RDS(on)
RDS(on)
VGS = 15 V, ID = 0.5ID25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
0.06
• Very low insertion inductance (<2nH)
Ω • No beryllium oxide (BeO) or other
hazardous materials
gfs VDS = 15 V, ID = 0.5ID25, pulse test
www.DataSheet4U.com
TJ
TJM
9.7 S
Advantages
-55
+175
°C • Optimized for RF and high speed
175
°C
switching
• Easy to mount—no insulators needed
Tstg
-55
+175
°C • High power density
TL 1.6mm(0.063 in) from case for 10 s
300 °C
Weight
2g
1 page DE275-101N30A
RF Power MOSFET
101N30A DE-SERIES SPICE Model
The DE-SERIES SPICE Model is illustrated in Figure 7. The model is an expansion of the SPICE
level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the
device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer ca-
pacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type response
necessary for a high power device model. The turn on delay and the turn off delay are adjusted
via Ron and Roff.
Figure 7 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the IXYSRF web site at
http://www.ixysrf.com/products/switch_mode.html
http://www.ixysrf.com/spice/de275-101n30a.html
*SYM=POWMOSN
.SUBCKT 101N09A 10 20 30
* TERMINALS: D G S
* 100 Volt 30 Amp .05 ohm N-Channel Power MOSFET 10-30-2001
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 1.5
DON 6 2 D1
ROF 5 7 .2
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 2.5N
RD 4 1 .05
DCOS 3 1 D3
RDS 1 3 5.0MEG
LS 3 30 .1N
wwwL.DDat1aS0h4eet14UN.com
LG 20 5 1N
.MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=9.0)
.MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N)
.MODEL D2 D (IS=.5F CJO=1100P BV=100 M=.5 VJ=.6 TT=1N RS=10M)
.MODEL D3 D (IS=.5F CJO=300P BV=100 M=.3 VJ=.4 TT=400N RS=10M)
.ENDS
Doc #9200-0242 Rev 1
© 2009 IXYS RF
An IXYS Company
2401 Research Blvd., Suite 108
Fort Collins, CO USA 80526
970-493-1901 Fax: 970-493-1903
Email: [email protected]
Web: http://www.ixyscolorado.com
5 Page |
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DE275-101N30A | RF Power MOSFET | IXYS Corporation |
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