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PDF 11N90 Data sheet ( Hoja de datos )
| Número de pieza | 11N90 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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UNISONIC TECHNOLOGIES CO., LTD
11N90
Preliminary
11 Amps, 900 Volts
N-CHANNEL POWER MOSFET
1
DESCRIPTION
The UTC 11N90 is an N-channel enhancement mode Power
FET using UTC’s advanced technology to provide costomers with
planar stripe and DMOS technology. This technology specializes in
allowing a minimum on-state resistance and superior switching
performance. It also can withstand high energy pulse in the
avalanche and commutation mode.
The UTC 11N90 is universally applied in high efficiency switch
mode power supply,
1
Power MOSFET
TO-220
TO-220F1
FEATURES
* 11A, 900V, RDS(on) = 1.1Ω @VGS = 10 V
* High switching speed
* Improved dv/dt capability
* 100% avalanche tested
* Halogen Free
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
11N90L-TA3-T
11N90G-TA3-T
11N90L-TF1-T
11N90G-TF1-T
Note: Pin Assignment: G: Gate D: Drain
Package
TO-220
TO-220F1
S: Source
Pin Assignment
1 23
G DS
G DS
Packing
Tube
Tube
www.DataSheet4U.com
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-497.a
1 page  
11N90
Preliminary
Peak Diode Recovery dv/dt Test Circuit & Waveforms
Power MOSFET
RG
VGS
DUT
ISD
+
VDS
L
-
Driver
Same Type
as DUT
VDD
dv/dt controlled by RG
ISD controlled by pulse period
(DVrGivSer
)
ISD
(DUT)
VDS
(DUT)
www.DataSheet4U.com
D=
Gate Pulse
Gate Pulse
Width
Period
10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-497.a
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 11N90.PDF ] | |
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