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PDF 12N70 Data sheet ( Hoja de datos )
| Número de pieza | 12N70 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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UNISONIC TECHNOLOGIES CO., LTD
12N70
12 Amps, 700 Volts
N-CHANNEL MOSFET
DESCRIPTION
The UTC 12N70 are N-Channel enhancement mode power
field effect transistors (MOSFET) which are produced using UTC’s
proprietary, planar stripe, DMOS technology.
These devices are suited for high efficiency switch mode
power supply. To minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the
avalanche and commutation mode the advanced technology has
been especially tailored.
FEATURES
* RDS(ON) = 0.87Ω @VGS = 10 V
* Ultra low gate charge ( typical 42 nC )
* Low reverse transfer capacitance ( CRSS = typical 25 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Note:
Ordering Number
Lead Free Plating
Halogen Free
12N70L-TA3-T
12N70G-TA3-T
12N70L-TF1-T
12N70G-TF1-T
12N70L-TF3-T
12N70G-TF3-T
Pin Assignment: G: Gate D: Drain S: Source
www.DataSheet4U.com
Package
TO-220
TO-220F1
TO-220F
Pin Assignment
12 3
GD S
GD S
GD S
Packing
Tube
Tube
Tube
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
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QW-R502-220.C
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12N70
TEST CIRCUITS AND WAVEFORMS (Cont.)
Power MOSFET
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
RD
10V
www.DataSheet4U.com tp
L
VDS
BVDSS
IAS
VDD
D.U.T.
VDD
ID(t)
tp
VDS(t)
Time
Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-220.C
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 12N70.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
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