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Datasheet MGD623N-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
MGD Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | MGD25 | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | MGD50 | Diode, Rectifier American Microsemiconductor diode | | |
| 3 | MGD622 | IGBT, Insulated Gate Bipolar Transistor 600 V, 20 A, IGBT with Fast Recovery Diode
MGD622
Features
Low Saturation Voltage High Speed Switching With Integrated Low VF Fast Recovery Diode RoHS Compliant
VCE ------------------------------------------------------ 600 V IC-------------------------------------------20 A  Sanken electric igbt | | |
| 4 | MGD623N | IGBT, Insulated Gate Bipolar Transistor IGBT
MGD623N
■Features
• Low Saturation Voltage VCE(sat)=1.7V typ. • High Speed tf=200ns typ. • Low VF FRD Included VF=1.2V typ.
July, 2009
■Package----TO-3P
■Applications
• Current Resonance Inverter Switching • Induction Heating Cooking
■Equivalent circuit
C (2)
G (1)
E (3 Sanken electric igbt | | |
| 5 | MGD623S | IGBT, Insulated Gate Bipolar Transistor IGBT
MGD623S
■Features
• Low Saturation Voltage VCE(sat)=1.8V typ. • High Speed tf=120ns typ. • Low VF FRD Included VF=1.2V typ.
July, 2009
■Package----TO-3P
■Applications
• Current Resonance Inverter Switching • Induction Heating Cooking
■Equivalent circuit
C (2)
G (1)
E (3 Sanken electric igbt | | |
| 6 | MGD91 | Diode, Rectifier American Microsemiconductor diode | | |
| 7 | MGDB-04 | 4W POWER Hi-Rel DC/DC CONVERTER MGDM-04 : 4W POWER
Hi-Rel Grade
Single, Bi & Triple Outputs Metallic Case - 1.500 VDC Isolation
• 28 Vdc input compliant with MIL-STD-704 D/E • Low profile : 0,3‘’ (7.5mm) • Nominal power of 4W without derating • Wide temperature range : -40  Gaia Converter data | |
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