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부품번호 | J449 기능 |
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기능 | P-Channel MOSFET ( Transistor ) - 2SJ449 | ||
제조업체 | NEC | ||
로고 | |||
전체 8 페이지수
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ449
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SJ449 is P-Channel MOS Field Effect Transistor de-
signed for high voltage switching applications.
FEATURES
• Low On-Resistance
RDS(on) = 0.8 Ω MAX. (@ VGS = –10 V, ID = –3.0 A)
• Low Ciss Ciss = 1040 pF TYP.
• High Avalanche Capability Ratings
• Isolated TO-220 Package
PACKAGE DIMENSIONS
(in millimeters)
10.0 ±0.3
4.5 ±0.2
3.2 ±0.2
2.7 ±0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS
–250
V
Gate to Source Voltage
VGSS
m 30 V
Drain Current (DC)
ID(DC)
m 6.0
A
Drain Current (pulse)*
ID(pulse)
m 24 A
Total Power Dissipation (Tc = 25 ˚C) PT1
35 W
Total Power Dissipation (TA = 25 ˚C) PT2
2.0 W
Channel Temperature
Tch 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS
–6.0 A
Single Avalanche Energy** EAS 180 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = –20 V → 0
0.7 ±0.1
2.54
1.3 ±0.2
2.5 ±0.1
1.5 ±0.2 0.65 ±0.1
2.54
1 23
1. Gate
2. Drain
3. Source
MP-45F(ISOLATED TO-220)
Drain
Gate
Body
Diode
www.DataSheet4U.com
Source
Document No. D10030EJ1V0DS00
Date Published May 1995 P
Printed in Japan
© 1995
2SJ449
1 000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-a) = 62.5 ˚C/W
10
Rth(ch-c) = 3.57 ˚C/W
1
0.1
0.01
0.001
10 µ
100 µ
1 m 10 m 100 m
1
PW - Pulse Width - s
Single Pulse
10 100 1 000
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100 VDS = –10 V
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1.5
Pulsed
10
TA = –25 ˚C
25 ˚C
75 ˚C
125 ˚C
1.0
ID = –6 A
1.0 –3 A
–1.2 A
0.5
0.1
–0.1
–1.0 –10
ID - Drain Current - A
–100
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
1.5 Pulsed
1.0
VGS = –10 V
–20 V
0.5
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0
–1.0
–10
ID - Drain Current - A
–100
0 –5 –10 –15
VGS - Gate to Source Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
–8.0
VDS = –10 V
ID = –1 mA
–6.0
–4.0
–2.0
0
–50 0 50 100 150
Tch - Channel Temperature - ˚C
4
4페이지 2SJ449
REFERENCE
Document Name
NEC semiconductor device reliability/quality control system.
Quality grade on NEC semiconductor devices.
Semiconductor device mounting technology manual.
Semiconductor device package manual.
Guide to quality assurance for semiconductor devices.
Semiconductor selection guide.
Power MOS FET features and application switching power supply.
Application circuits using Power MOS FET.
Safe operating area of Power MOS FET.
Document No.
TEI-1202
IEI-1209
IEI-1207
IEI-1213
MEI-1202
MF-1134
TEA-1034
TEA-1035
TEA-1037
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device is actually used, an additional protection circuit is externally required if a voltage exceeding the
rated voltage may be applied to this device.
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