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부품번호 | PESD5V0X1BA 기능 |
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기능 | Ultra low capacitance bidirectional ESD protection diodes | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 12 페이지수
PESD5V0X1BA; PESD5V0X1BL
Ultra low capacitance bidirectional ESD protection diodes
Rev. 01 — 4 November 2008
Product data sheet
1. Product profile
www.DataSheet4U.net
1.1 General description
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in
small Surface-Mounted Device (SMD) plastic packages designed to protect one signal
line from the damage caused by ESD and other transients.
Table 1. Product overview
Type number
Package
NXP
PESD5V0X1BA
SOD323
PESD5V0X1BL
SOD882
JEITA
SC-76
-
Package configuration
very small
leadless ultra small
1.2 Features
I Bidirectional ESD protection of one line I ESD protection up to 9 kV
I Ultra low diode capacitance: Cd = 0.9 pF I IEC 61000-4-2; level 4 (ESD)
I Very low leakage current: IRM = 1 nA I AEC-Q101 qualified
1.3 Applications
I USB interfaces
I Antenna protection
I 10/100/1000 Mbit/s Ethernet
I FireWire
I High-speed data lines
I Subscriber Identity Module (SIM) card
protection
I Cellular handsets and accessories
I Portable electronics
I Communication systems
I Computers and peripherals
I Audio and video equipment
1.4 Quick reference data
Table 2. Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VRWM
Cd
reverse standoff voltage
diode capacitance
f = 1 MHz; VR = 0 V
Min Typ Max Unit
- - 5V
- 0.9 1.3 pF
NXP Semiconductors
PESD5V0X1BA; PESD5V0X1BL
Ultra low capacitance bidirectional ESD protection diodes
6. Characteristics
Table 9. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VRWM
IRM
VBR
Cd
rdif
reverse standoff voltage
reverse leakage current
breakdown voltage
diode capacitance
differential resistance
VRWM = 5 V
IR = 5 mA
f = 1 MHz
VR = 0 V
VR = 5 V
IR = 1 mA
Min Typ Max Unit
- - 5V
- 1 100 nA
6.0 7.5 9.5 V
- 0.9 1.3 pF
- 0.8 1.2 pF
- - 100 Ω
1.0
Cd
(pF)
0.96
006aab249
0.92
0.88
0.84
0.80
012345
VR (V)
f = 1 MHz; Tamb = 25 °C
Fig 2.www.DataSheet4U.net Diode capacitance as a function of reverse
voltage; typical values
IPP
−VCL −VBR −VRWM
IR
IRM
−IRM
−IR
VRWM VBR VCL
−
−IPP
+
006aaa676
Fig 3. V-I characteristics for a bidirectional
ESD protection diode
PESD5V0X1BA_PESD5V0X1BL_1
Product data sheet
Rev. 01 — 4 November 2008
© NXP B.V. 2008. All rights reserved.
4 of 12
4페이지 NXP Semiconductors
9. Package outline
PESD5V0X1BA; PESD5V0X1BL
Ultra low capacitance bidirectional ESD protection diodes
1.35
1.15
1
0.45
0.15
1.1
0.8
2.7 1.8
2.3 1.6
Dimensions in mm
2
0.40
0.25
0.25
0.10
03-12-17
0.30
0.22
0.62
0.55
2
0.30
0.22
1
0.55
0.47
Dimensions in mm
0.50
0.46
0.65
1.02
0.95
cathode marking on top side
03-04-17
Fig 6. Package outline
PESD5V0X1BA (SOD323/SC-76)
Fig 7. Package outline PESD5V0X1BL (SOD882)
10. Packing information
Table 10. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description
PESD5V0X1BA SOD323 4 mm pitch, 8 mm tape and reel
PESD5V0X1BL SOD882 2 mm pitch, 8 mm tape and reel
Packing quantity
3 000
10 000
-115
-135
- -315
[1] For further information and the availability of packing methods, see Section 14.
www.DataSheet4U.net
PESD5V0X1BA_PESD5V0X1BL_1
Product data sheet
Rev. 01 — 4 November 2008
© NXP B.V. 2008. All rights reserved.
7 of 12
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부품번호 | 상세설명 및 기능 | 제조사 |
PESD5V0X1BA | Ultra low capacitance bidirectional ESD protection diodes | NXP Semiconductors |
PESD5V0X1BCAL | Extremely low capacitance bidirectional ESD protection diode | NXP Semiconductors |
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