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PESD5V0X1BT 데이터시트 PDF




NXP Semiconductors에서 제조한 전자 부품 PESD5V0X1BT은 전자 산업 및 응용 분야에서
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부품번호 PESD5V0X1BT 기능
기능 Ultra low capacitance bidirectional ESD protection diodes
제조업체 NXP Semiconductors
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PESD5V0X1BT 데이터시트, 핀배열, 회로
PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
Rev. 01 — 30 October 2008
Product data sheet
1. Product profile
www.DataSheet4U.net
1.1 General description
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diodes in
small Surface-Mounted Device (SMD) plastic packages designed to protect one signal
line from the damage caused by ESD and other transients.
The devices may also be used for unidirectional ESD protection of up to two signal lines.
Table 1. Product overview
Type number
Package
NXP
PESD5V0X1BQ
SOT663
PESD5V0X1BT
SOT23
JEDEC
-
TO-236AB
Package configuration
ultra small and flat lead
very small
1.2 Features
I Bidirectional ESD protection of one line I ESD protection up to 9 kV
I Unidirectional ESD protection of up to I IEC 61000-4-2; level 4 (ESD)
two lines
I Ultra low diode capacitance: Cd = 0.9 pF I AEC-Q101 qualified
I Very low leakage current: IRM = 1 nA
1.3 Applications
I USB interfaces
I Antenna protection
I Radio Frequency (RF) protection
I 10/100/1000 Mbit/s Ethernet
I FireWire
I Asymmetric Digital Subscriber Line
(ADSL)
I High-speed data lines
I Subscriber Identity Module (SIM) card
protection
I Computers, peripherals and printers
I Cellular handsets and accessories
I Portable electronics
I Communication systems
I Audio and video equipment




PESD5V0X1BT pdf, 반도체, 판매, 대치품
NXP Semiconductors
PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
IPP
100 %
90 %
001aaa631
10 %
tr = 0.7 ns to 1 ns
30 ns
60 ns
Fig 1. ESD pulse waveform according to IEC 61000-4-2
t
6. Characteristics
www.DataSheet4U.net
Table 9. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VRWM
reverse standoff
voltage
IRM reverse leakage current VRWM = 5 V
VBR breakdown voltage IR = 5 mA
Cd
diode capacitance
f = 1 MHz
VR = 0 V
VR = 5 V
rdif differential resistance IR = 1 mA
Min Typ Max Unit
- - 5V
- 1 100 nA
5.8 7.5 9.5 V
[1] - 0.9 1.3 pF
[2] -
2 2.6 pF
[1] - 0.8 1.2 pF
[2] - 1.7 2.3 pF
- - 100
[1] Bidirectional configuration: measured from pin 1 to 2 or pin 2 to 1.
[2] Unidirectional configuration: measured from pin 1 to 3 or pin 2 to 3.
PESD5V0X1BQ_PESD5V0X1BT_1
Product data sheet
Rev. 01 — 30 October 2008
© NXP B.V. 2008. All rights reserved.
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PESD5V0X1BT 전자부품, 판매, 대치품
NXP Semiconductors
PESD5V0X1BQ; PESD5V0X1BT
Ultra low capacitance bidirectional ESD protection diodes
7. Application information
PESD5V0X1BQ and PESD5V0X1BT are designed for the protection of one bidirectional
data or signal line from the damage caused by ESD. The devices may be used on lines
where the signal polarities are both, positive and negative with respect to ground.
PESD5V0X1BQ and PESD5V0X1BT may also be used for the protection of two
unidirectional data or signal lines, which have positive signal polarities with respect to
ground.
line 1 to be protected
DUT
GND
line 1 to be protected
line 2 to be protected
DUT
GND
www.DataSheet4U.net
bidirectional protection
of one line
unidirectional protection
of two lines
006aab252
Fig 7. Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD and Electrical Fast
Transient (EFT). The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PESD5V0X1BQ_PESD5V0X1BT_1
Product data sheet
Rev. 01 — 30 October 2008
© NXP B.V. 2008. All rights reserved.
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