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PDF PESD5V0X1UALD Data sheet ( Hoja de datos )
| Número de pieza | PESD5V0X1UALD | |
| Descripción | Ultra low capacitance unidirectional ESD protection diode | |
| Fabricantes | NXP Semiconductors | |
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PESD5V0X1UALD
Ultra low capacitance unidirectional ESD protection diode
Rev. 1 — 5 April 2011
Product data sheet
1. Product profile
www.DataSheet4U.net
1.1 General description
Ultra low capacitance unidirectional ElectroStatic Discharge (ESD) protection diode
designed to protect one signal line from the damage caused by ESD and other transients.
The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD)
plastic package with visible and solderable side pads.
1.2 Features and benefits
ESD protection of one line
Ultra low diode capacitance
Cd = 1.55 pF
Ultra small SMD plastic package
Solderable side pads
Package height typ. 0.37 mm
Ultra low leakage current: IRM = 1 nA
ESD protection up to 15 kV
IEC 61000-4-2; level 4 (ESD)
Low clamping voltage: VCL = 9 V
IEC 61000-4-5 (surge); IPP = 2 A
AEC-Q101 qualified
1.3 Applications
Computers and peripherals
Audio and video equipment
Cellular handsets and accessories
10/100/1000 Mbit/s Ethernet
Communication systems
Portable electronics
Subscriber Identity Module (SIM) card
protection
USB, High-Definition Multimedia
Interface (HDMI), FireWire
High-speed data lines
1.4 Quick reference data
Table 1.
Symbol
VRWM
Cd
Quick reference data
Parameter
reverse standoff voltage
diode capacitance
Conditions
f = 1 MHz; VR = 0 V
Min Typ Max Unit
- - 5.5 V
- 1.55 1.75 pF
1 page  
NXP Semiconductors
PESD5V0X1UALD
Ultra low capacitance unidirectional ESD protection diode
6. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VRWM
reverse standoff
voltage
IRM reverse leakage current VRWM = 5.5 V
VBR breakdown voltage IR = 10 mA
Cd diode capacitance f = 1 MHz; VR = 0 V
VCL clamping voltage
IPP = 2 A
rdyn
dynamic resistance
IR = 10 A
Min
-
-
5.8
-
[1][2] -
[3] -
Typ Max Unit
- 5.5 V
1 100 nA
7.5 10
V
1.55 1.75 pF
- 9V
0.15 -
Ω
[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1 to 2.
[3] Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse;
ANS/IESD STM5-1-2008.
1.7
Cd
(pF)
1.6
006aac514
1.5
1.4
1.3
1.2
1.1
1.0www.DataSheet4U.net
0.0 1.0 2.0 3.0 4.0 5.0
VR (V)
Fig 4.
f = 1 MHz; Tamb = 25 °C
Diode capacitance as a function of reverse
voltage; typical values
I
−VCL −VBR −VRWM
−+
P-N
−IRM
−IR
V
−IPP
006aaa407
Fig 5. V-I characteristics for a unidirectional
ESD protection diode
PESD5V0X1UALD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 5 April 2011
© NXP B.V. 2011. All rights reserved.
5 of 12
5 Page 
NXP Semiconductors
PESD5V0X1UALD
Ultra low capacitance unidirectional ESD protection diode
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
www.DataSheet4U.net
PESD5V0X1UALD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 5 April 2011
© NXP B.V. 2011. All rights reserved.
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