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BUK223-50Y 데이터시트 PDF




NXP Semiconductors에서 제조한 전자 부품 BUK223-50Y은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


 

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부품번호 BUK223-50Y 기능
기능 PowerMOS transistor TOPFET high side switch
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BUK223-50Y 데이터시트, 핀배열, 회로
Philips Semiconductors
PowerMOS transistor
TOPFET high side switch
Product specification
BUK223-50Y
DESCRIPTION
Monolithic single channel high side
protected power switch in
TOPFET2 technology assembled in
a 5 pin plastic package.
APPLICATIONS
General controller for driving
lamps, motors, solenoids, heaters.
FEATURES
Vertical power TrenchMOS
Low on-state resistance
CMOS logic compatible
Very low quiescent current
Overtemperature protection
Load current limiting
Latched overload and
short circuit protection
Overvoltage and undervoltage
shutdown with hysteresis
On-state open circuit load
detection
Diagnostic status indication
Voltage clamping for turn off
of inductive loads
ESD protection on all pins
Reverse battery, overvoltage
and transient protection
QUICK REFERENCE DATA
SYMBOL PARAMETER
IL Nominal load current (ISO)
SYMBOL
VBG
IL
Tj
RON
PARAMETER
Continuous off-state supply voltage
Continuous load current
Continuous junction temperature
On-state resistance
Tj = 25˚C
FUNCTIONAL BLOCK DIAGRAM
STATUS
INPUT
GROUND
CONTROL &
PROTECTION
CIRCUITS
RG
MIN.
12
UNIT
A
MAX.
50
25
150
30
UNIT
V
A
˚C
m
BATT
POWER
MOSFET
LOAD
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PINNING - SOT263B-01
PIN DESCRIPTION
1 Input
2 Flag
3 Drain
4 Protection supply
5 Source
tab Drain
Fig.1. Elements of the TOPFET HSS with internal ground resistor.
PIN CONFIGURATION
SYMBOL
mb mb
12345
Front view
Fig. 2.
MBL267
TOPFET
P
FP
I
D
S
Fig. 3.
November 2002
1
Rev 2.000




BUK223-50Y pdf, 반도체, 판매, 대치품
Philips Semiconductors
PowerMOS transistor
TOPFET high side switch
Product specification
BUK223-50Y
INPUT CHARACTERISTICS
9 V VBG 16 V. Limits are at -40˚C Tmb 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated.
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX.
UNIT
II Input current
VIG = 5 V
20 90 160 µA
VIG Input clamping voltage
II = 200 µA
5.5 7 8.5 V
VIG(ON)
Input turn-on threshold voltage
- 2.4 3
V
VIG(OFF)
Input turn-off threshold voltage
1.5 2.1
-
V
VIG
Input turn-on hysteresis
- 0.3 -
V
II(ON) Input turn-on current
VIG = 3 V
- - 100 µA
II(OFF)
Input turn-off current
VIG = 1.5 V
10 -
- µA
STATUS CHARACTERISTICS
The status output is an open drain transistor, and requires an external pull-up circuit to indicate a logic high.
Limits are at -40˚C Tmb 150˚C and typicals at Tmb = 25 ˚C unless otherwise stated. Refer to TRUTH TABLE.
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VSG Status clamping voltage
VSG Status low voltage
IS = 100 µA
IS = 100 µA
5.5 7 8.5
- -1
Tmb = 25˚C - 0.7 0.8
V
V
V
IS Status leakage current VSG = 5 V
IS
Status saturation current1
VSG = 5 V
Tmb = 25˚C
-
-
2
- 15 µA
0.1 1 µA
7 12 mA
Application information
RS External pull-up resistor
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OPEN CIRCUIT DETECTION CHARACTERISTICS
An open circuit load can be detected in the on-state. Refer to TRUTH TABLE.
Limits are at -40˚C Tmb 150˚C and typical is at Tmb = 25 ˚C.
SYMBOL PARAMETER
CONDITIONS
- 47 - k
MIN. TYP. MAX. UNIT
Open circuit detection
9 V VBG 35 V
IL(TO) Low current detect threshold
0.3 - 2 A
Tj = 25˚C 0.5 1 1.5 A
IL(TO)
Hysteresis
- 0.2 -
A
1 In a fault condition with the pull-up resistor short circuited while the status transistor is conducting. This condition should be avoided in order to
prevent possible interference with normal operation of the device.
November 2002
4
Rev 2.000

4페이지










BUK223-50Y 전자부품, 판매, 대치품
Philips Semiconductors
PowerMOS transistor
TOPFET high side switch
MECHANICAL DATA
Plastic single-ended package; heatsink mounted; 1 mounting hole;
5-lead TO-220 lead form option
E
p1
p
q
D1
D
A
A1
mounting
base
Product specification
BUK223-50Y
SOT263B-01
L
m
1
e
L3
L4
5
b wM
R
L2 R
Q
Q1
Q2
L1
c
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0 5 10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A A1 b
c
D D1 E
e
L
L1
L2
L3(1)
L4(2)
max.
m
p p1
q
Q Q1 Q2 R
w
mm
4.5
4.1
1.39 0.85
1.27 0.70
0.7
0.4
15.8
15.2
6.4
5.9
10.3
9.7
1.7
9.8
9.7
5.9
5.3
5.2
5.0
2.4
1.6
0.5
0.8
0.6
3.8
3.6
4.3
4.1
3.0
2.7
2.0
4.5
8.2
0.5
0.4
Notes
1. Terminal dimensions are uncontrolled in this zone.
2. Positional accuracy of the terminals is controlled in this zone.
OUTLINE
VERSION
SOT263B-01
REFERENCES
IEC
JEDEC
EIAJ
5-lead (option)
TO-220
EUROPEAN
PROJECTION
ISSUE DATE
01-01-11
Fig.4. SOT263B package1 leadform 263B-01, pin 3 connected to mounting base.
1 Refer to mounting instructions for TO220 envelopes. Epoxy meets UL94 VO at 1/8". Net mass: 2 g
November 2002
7
Rev 2.000

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부품번호상세설명 및 기능제조사
BUK223-50Y

PowerMOS transistor TOPFET high side switch

NXP Semiconductors
NXP Semiconductors

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