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PDF SPI15N65C3 Data sheet ( Hoja de datos )
| Número de pieza | SPI15N65C3 | |
| Descripción | CoolMOSTM Power Transistor | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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CoolMOSTM Power Transistor
Features
• Low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
CoolMOS C3 designed for:
• Notebook Adapter
Product Summary
V DS
R DS(on),max
Q g,typ
SPI15N65C3
650 V
0.28 Ω
63 nC
TO-262-3-1
Type
SPI15N65C3
Package
P-TO262-3-1
Marking
15N65C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous drain current
Pulsed drain currentwww.DataSheet4U.net
3)
Avalanche energy, single pulse
Symbol Conditions
ID
I D,pulse
E AS
T C=25 °C
T C=100 °C
T C=25 °C
I D=3 A, V DD=50 V
Avalanche
energy,
repetitive
t
2),3)
AR
E AR
I D=5 A, V DD=50 V
Avalanche
current,
repetitive
t
3),4)
AR
I AR
MOSFET dv /dt ruggedness
Gate source voltage
Power dissipation
Operating and storage temperature
dv /dt
V GS
V DS=0...480 V
static
AC (f>1 Hz)
P tot T C=25 °C
T j, T stg
Rev. 2.0
page 1
Value
15
9.4
45
460
0.8
5.0
50
±20
±30
156
-55 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
2007-09-10
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=150 °C
parameter: V GS
25
20
20 V
10 V
8V
7V
6 V 5.5 V
15
5V
10
4.5 V
5
SPI15N65C3
6 Typ. drain-source on-state resistance
R DS(on)=f(I D); T j=150 °C
parameter: V GS
4
20 V
3
7V
2
6.5 V
6V
1
5.5 V
5V
0
0 5 10 15
V DS [V]
7 Drain-source on-state resistance
R DS(on)=f(T j); I D= 9.4 A; V GS=10 V
20
www.DataSheet4U.net
0.8
0.6
0
25 0 10 20
I D [A]
8 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
50
40
0.4
98 %
typ
0.2
30
20
10
30 40
25°C
150°C
0
-50 0 50 100 150
T j [°C]
0
0 2 4 6 8 10
V GS [V]
Rev. 2.0
page 5
2007-09-10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SPI15N65C3.PDF ] | |
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