|
|
|
부품번호 | SPI21N50C3 기능 |
|
|
기능 | Power Transistor | ||
제조업체 | Infineon Technologies | ||
로고 | |||
전체 14 페이지수
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO 220
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
SPP21N50C3
SPI21N50C3, SPA21N50C3
VDS @ Tjmax
RDS(on)
ID
560
0.19
21
V
Ω
A
PG-TO220FP
P G-TO262 PG-TO220
3
12
Type
SPP21N50C3
SPI21N50C3
SPA21N50C3
Package
PG-TO220
PG-TO262
PG-TO220FP
Ordering Code
Q67040-S4565
Q67040-S4564
SP000216364
Marking
21N50C3
21N50C3
21N50C3
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
TC = 100 °Cwww.DataSheet4U.net
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=10A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=21A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
Reverse diode dv/dt 7)
Rev. 3.2
page 1
Symbol
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
dv/dt
Value
SPP_I
SPA
21
13.1
63
690
211)
13.11)
63
690
Unit
A
A
mJ
11
21 21
±20 ±20
±30 ±30
208 34.5
-55...+150
15
A
V
W
°C
V/ns
2009-12-22
SPP21N50C3
SPI21N50C3, SPA21N50C3
Electrical Characteristics
Parameter
Symbol Conditions
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Peak rate of fall of reverse
recovery current
IS TC=25°C
ISM
VSD
trr
Qrr
Irrm
dirr/dt
VGS=0V, IF=IS
VR=380V, IF=IS ,
diF/dt=100A/µs
Tj=25°C
min.
-
Values
typ. max.
- 21
Unit
A
- - 63
- 1 1.2 V
- 450 720 ns
- 9 - µC
- 60 - A
- 1200 - A/µs
Typical Transient Thermal Characteristics
Symbol
Value
Unit Symbol
SPP_I
SPA
Rth1
Rth2
Rth3
Rth4
Rth5
R th6www.DataSheet4U.net
0.00769
0.015
0.029
0.114
0.136
0.059
0.00769
0.015
0.029
0.16
0.319
2.523
K/W
Cth1
Cth2
Cth3
Cth4
Cth5
Cth6
Value
SPP_I
SPA
0.0003763 0.0003763
0.001411 0.001411
0.001931 0.001931
0.005297 0.005297
0.012
0.008659
0.091
0.412
Unit
Ws/K
Ptot (t)
Tj Rth1
C th1
C th 2
R th,n
Tcase External Heatsink
C th,n
Tamb
Rev. 3.2
page 4
2009-12-22
4페이지 SPP21N50C3
SPI21N50C3, SPA21N50C3
9 Typ. drain-source on resistance
RDS(on)=f(ID)
parameter: Tj=150°C, VGS
1.5
10 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 13.1 A, VGS = 10 V
SPP21N50C3
1.1
Ω
Ω
Vgs = 4V
Vgs = 4.5V
Vgs = 5V
Vgs = 5.5V
Vgs = 6V
Vgs = 20V
0.9
0.6
0.30 5 10 15 20 25 30 A 40
ID
11 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
70
A
www.DataSheet4U.net
50
40
Tj = 25°C
Tj = 150°C
30
20
10
0.9
0.8
0.7
0.6
0.5
0.4
0.3
98%
0.2 typ
0.1
0-60 -20 20 60 100
12 Typ. gate charge
VGS = f (QGate)
parameter: ID = 21 A pulsed
16 SPP21N50C3
V
°C 180
Tj
12
10
0,2 VDS max
0,8 VDS max
8
6
4
2
00 2 4 6 V 10
VGS
Rev. 3.2
page 7
00 20 40 60 80 100 nC 140
QGate
2009-12-22
7페이지 | |||
구 성 | 총 14 페이지수 | ||
다운로드 | [ SPI21N50C3.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
SPI21N50C3 | Power Transistor | Infineon Technologies |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |