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PDF IXFH230N075T2 Data sheet ( Hoja de datos )
| Número de pieza | IXFH230N075T2 | |
| Descripción | TrenchT2 HiperFET Power MOSFET | |
| Fabricantes | IXYS Corporation | |
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TrenchT2TM HiperFETTM IXFH230N075T2
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
VDSS =
ID25 =
RDS(on) ≤
75V
230A
4.2mΩ
TO-247
Symbol
VDSS
VDGR
VGSM
ID25
ILRMS
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
Tsold
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Transient
TC = 25°C (Chip Capability)
Lead Current Limit, RMS
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Maximum Ratings
75
75
V
V
± 20 V
230 A
160 A
700 A
115 A
850 mJ
480 W
-55 ... +175
175
-55 ... +175
300
260
6
°C
°C
°C
°C
°C
g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 1mA
IGSS VGS = ± 20V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 50A, Note 1
Characteristic Values
Min. Typ. Max.
75 V
2.0 4.0 V
±200 nA
25 μA
250 μA
4.2 mΩ
G
DS
Tab
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z International Standard Package
z 175°C Operating Temperature
z High Current Handling Capability
z Avalanche Rated
z Fast Intrinsic Rectifier
z Low RDS(on)
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z Automotive
- Motor Drives
- 12V Power Bus
- ABS Systems
z DC/DC Converters and Off-Line UPS
z Primary- Side Switch
z High Current Switching Applications
w©w20w10.DIXaYStaCSOhRePeOtR4AUTI.OnNe, tAll Rights Reserved
DS100075A(03/10)
1 page  
IXFH230N075T2
26
24
22
20
18
16
14
12
10
25
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
RG = 2Ω , VGS = 10V
VDS = 38V
I D = 230A
I D = 115A
35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
50 55
45 t r
td(on) - - - -
40 TJ = 125ºC, VGS = 10V
VDS = 38V
35
I D = 230A, 115A
50
45
40
30 35
25 30
20 25
15 20
10 15
5 10
2 4 6 8 10 12 14 16
RG - Ohms
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
26 60
t f td(off) - - - -
24 RG = 2Ω, VGS = 10V
22 VDS = 38V
55
50
20
TJ = 125ºC
45
18 40
16 35
14 30
12
TJ = 25ºC
25
10 20
110 120 130 140 150 160 170 180 190 200 210 220 230
ID - Amperes
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
22
RG = 2Ω , VGS = 10V
20 VDS = 38V
18 TJ = 25ºC
16
14
12 TJ = 125ºC
10
110 120 130 140 150 160 170 180 190 200 210 220 230
ID - Amperes
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
30 65
28
tf
td(off) - - - -
60
26
RG = 2Ω, VGS = 10V
55
24
VDS = 38V
50
22
20 I D = 115A
45
40
18 35
16 30
14 I D = 230A
12
25
20
10 15
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
280 280
240
t f td(off) - - - -
TJ = 125ºC, VGS = 10V
200 VDS = 38V
240
200
160 I D = 115A
160
120 120
80 80
40 I D = 230A
40
00
2 4 6 8 10 12 14 16
RG - Ohms
© 2010 IXYS CORPORATION, All Rights Reserved
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXFH230N075T2.PDF ] | |
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