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Datasheet CY62138EV30 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | CY62138EV30 | 2 Mbit (256K x 8) MoBL Static RAM 2 Mbit (256K x 8) MoBL Static RAM
Features
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CY62138EV30 MoBL®
Functional Description
The CY62138EV30[1] is a high performance CMOS static RAM organized as 256K words by eight bits. This device features advanced circuit design to provide ultra low active current. This i | Cypress Semiconductor | data |
CY6 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | CY6116A | 2K x 8 Static RAM 6116A: 11/8/89 Revision: Monday, November 8, 1993
Features
D D D D D D D
Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V elect Cypress Semiconductor data | | |
2 | CY6116A-20PC | 2K x 8 Static RAM 6116A: 11/8/89 Revision: Monday, November 8, 1993
Features
D D D D D D D
Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V elect Cypress Semiconductor data | | |
3 | CY6116A-25DMB | 2K x 8 Static RAM 6116A: 11/8/89 Revision: Monday, November 8, 1993
Features
D D D D D D D
Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V elect Cypress Semiconductor data | | |
4 | CY6116A-25LMB | 2K x 8 Static RAM 6116A: 11/8/89 Revision: Monday, November 8, 1993
Features
D D D D D D D
Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V elect Cypress Semiconductor data | | |
5 | CY6116A-25PC | 2K x 8 Static RAM 6116A: 11/8/89 Revision: Monday, November 8, 1993
Features
D D D D D D D
Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V elect Cypress Semiconductor data | | |
6 | CY6116A-35DMB | 2K x 8 Static RAM 6116A: 11/8/89 Revision: Monday, November 8, 1993
Features
D D D D D D D
Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V elect Cypress Semiconductor data | | |
7 | CY6116A-35LMB | 2K x 8 Static RAM 6116A: 11/8/89 Revision: Monday, November 8, 1993
Features
D D D D D D D
Automatic powerĆdown when deselected CMOS for optimum speed/power High speed Ċ 20 ns Low active power Ċ 550 mW Low standby power Ċ 110 mW TTLĆcompatible inputs and outputs Capable of withstanding greater than 2001V elect Cypress Semiconductor data | |
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Número de pieza | Descripción | Fabricantes | |
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