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PDF 2N4416A Data sheet ( Hoja de datos )
| Número de pieza | 2N4416A | |
| Descripción | High Frequency | |
| Fabricantes | Micross | |
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2N4416A
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix 2N4416A
The 2N4416A is a N-Channel high frequency JFET amplifier
The 2N4416A N-channel JFET is designed to provide
high-performance amplification at high frequencies.
The hermetically sealed TO-18 package is well suited
for military applications and harsh environment
applications.
2N4416A Benefits:
FEATURES
DIRECT REPLACEMENT FOR SILICONIX 2N4416A
EXCEPTIONAL GAIN (400 MHz)
VERY LOW NOISE FIGURE (400 MHz)
VERY LOW DISTORTION
HIGH AC/DC SWITCH OFF‐ISOLATION
ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted)
10dB (min)
4dB (max)
Wideband High Gain
Very High System Sensitivity
High Quality of Amplification
High-Speed Switching Capability
High Low-Level Signal Amplification
2N4416A Applications:
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
MAXIMUM CURRENT
‐65°C to +200°C
‐55°C to +135°C
300mW
High-Frequency Amplifier / Mixer
Oscillator
Sample-and-Hold
Very Low Capacitance Switches
Gate Current (Note 1)
MAXIMUM VOLTAGES
Gate to Drain or Gate to Source
10mA
‐35V
2N4416A ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN TYP.
MAX
UNITS
CONDITIONS
BVGSS
Gate to Source Breakdown Voltage ‐35
‐‐
‐‐
V
IG = ‐1µA, VDS = 0V
VGS(off)
IDSS
IGSS
gfs
gos
ClickCiss
Gate to Source Cutoff Voltage
Gate to Source Saturation Current
Gate Leakage Current
Forward Transconductance
Output Conductance
Input Capacitance2
‐2.5
5
‐‐
4500
‐‐
‐‐
Crss
Reverse Transfer Capacitance2
‐‐
Coss
Output Capacitance2
‐‐
To‐‐ ‐6
‐‐ 15
‐‐ ‐0.1
‐‐ 7500
‐‐ 50
‐‐ 0.8
‐‐ 4
‐‐ 2
BuyV VDS = 15V, ID = 1nA
mA VDS = 15V, VGS = 0V
nA VGS = ‐20V, VDS = 0V
µS VDS = 15V, VGS = 0V, f = 1kHz
µS
pF
pF VDS = 15V, VGS = 0V, f = 1MHz
pF
en
Equivalent Input Noise Voltage
‐‐
6
‐‐
nV/√Hz
2N4416A HIGH FREQUENCY ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
VDS = 10V, VGS = 0V, f = 1kHz
SYMBOL
CHARACTERISTIC
100 Mhz
400 Mhz
UNITS
CONDITIONS
MIN MAX MIN MAX
gIss
Input Conductance
‐‐ 100 ‐‐ 1000
bIss
Input Susceptance2
‐‐ 2500 ‐‐ 10000
µS
goss
Output Conductance
‐‐ 75 ‐‐ 100
boss
Output Susceptance2
‐‐ 1000 ‐‐ 4000
VDS = 15V, VGS = 0V
Gfs
Forward Transconductance
‐‐ ‐‐ 4000 ‐‐
Gps
Power Gain2
18 ‐‐ 10 ‐‐ dB
VDS = 15V, ID = 5mA
NF
Noise Figure2
‐‐ 2 ‐‐ 4
VDS = 15V, ID = 5mA, RG = 1kΩ
NOTES
1 . Absolute maximum ratings are limiting values above which 2N4416A serviceability may be impaired.
2. Not production tested, guaranteed by design
Micross Components Europe
Available Packages:
2N4416A in TO-18
2N4416A in bare die.
TO-18 (Bottom View)
Tel: +44 1603 788967
Email: [email protected]
Web: http://www.micross.com/distribution
Please contact Micross for full
package and die dimensions
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed
for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: [email protected] Web: www.micross.com/distribution.aspx
1 page | ||
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| PDF Descargar | [ Datasheet 2N4416A.PDF ] | |
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