J309 Datasheet PDF - Micross
| Part Number | J309 | |
| Description | Amplifier | |
| Manufacturers | Micross | |
| Logo |  |
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There is a preview and J309 download ( pdf file ) link at the bottom of this page. Total 1 Pages | ||
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J309
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix J309
The J309 is a high frequency n-channel JFET offering a
wide range and low noise performance. The TO-92
FEATURES
DIRECT REPLACEMENT FOR SILICONIX J309
package is well suited for cost sensitive applications
and mass production.
(See Packaging Information).
J309 Benefits:
High Power Low Noise gain
Dynamic Range greater than 100dB
Easily matched to 75Ω input
J309 Applications:
OUTSTANDING HIGH FREQUENCY GAIN
LOW HIGH FREQUENCY NOISE
ABSOLUTE MAXIMUM RATINGS @ 25°C1
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation
MAXIMUM CURRENT
Gpg = 11.5dB
NF = 2.7dB
‐55°C to +150°C
‐55°C to +135°C
350mW
UHV / VHF Amplifiers
Mixers
Oscillators
Gate Current
MAXIMUM VOLTAGES
Gate to Drain Voltage or Gate to Source Voltage
10mA
‐25V
J309 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN TYP. MAX UNIT
CONDITIONS
BVGSS
Gate to Source Breakdown Voltage ‐25 ‐‐ ‐‐ V
VDS = 0V, IG = ‐1µA
VGS(F)
Gate to Source Forward Voltage
0.7 ‐‐
1
VDS = 0V, IG = 10mA
VGS(off)
IDSS
Gate to Source Cutoff Voltage
‐1 ‐‐ ‐4
Drain to Source Saturation Current2 12 ‐‐ 30 mA
VDS = 10V, ID = 1nA
VDS = 10V, VGS = 0V
IG
Gate Operating Current (Note 3)
‐‐ ‐15 ‐‐ pA
VDG = 9V, ID = 10mA
rDS(on)
Drain to Source On Resistance
‐‐ 35 ‐‐
Ω
VGS = 0V, ID = 1mA
J309 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN TYP.
gfs
Forward Transconductance
10 14
gos
Output Conductance
‐‐ 110
Click ToCiss
Input Capacitance
‐‐ 4
MAX
‐‐
250
5
Crss
Reverse Transfer Capacitance
‐‐ 1.9 2.5
BuyUNIT
mS
µS
pF
CONDITIONS
VDS = 10V, ID = 10mA , f = 1kHz
VDS = 10V, VGS = ‐10V , f = 1MHz
en
Equivalent Noise Voltage
6
‐‐
‐‐
nV/√Hz
VDS = 10V, ID = 10mA , f = 100Hz
J309 HIGH FREQUENCY CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN TYP MAX UNIT
CONDITIONS
NF
Noise Figure
f = 105MHz
‐‐
1.5
‐‐
f = 450MHz
‐‐
2.7
‐‐
Gpg
Power Gain3
f = 105MHz
‐‐
16
‐‐
f = 450MHz
‐‐
11.5
‐‐
gfg
Forward Transconductance f = 105MHz
‐‐
14
‐‐
f = 450MHz
‐‐
13
‐‐
gog
Output Conductance
f = 105MHz
‐‐
0.16
‐‐
f = 450MHz
‐‐
0.55
‐‐
dB
dB
mS
VDS = 10V, ID = 10mA
Note 1 ‐ Absolute maximum ratings are limiting values above which J309 serviceability may be impaired.
Note 2 ‐ Pulse test : PW ≤ 3 00µs, Duty Cycle ≤ 3%
Note 3 ‐ Measured at optim um input n oise match
Micros s Components Europe
Available Packages:
LSJ309 in TO-92
LSJ309 in bare die.
TO-92 (Bottom View)
Tel: +44 1603 788967
Email: [email protected]
Web: http://www.micross.com/distribution
Please contact Micross for full
package and die dimensions
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: [email protected] Web: www.micross.com/distribution.aspx
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for J309 electronic component. |
| Information | Total 1 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ J309.PDF Datasheet ] | |
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