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부품번호 | LS132 기능 |
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기능 | General Purpose | ||
제조업체 | Micross | ||
로고 | |||
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LS132
MONOLITHIC DUAL
PNP TRANSISTOR
Linear Systems replaces discontinued Intersil IT132
The LS132 is a monolithic pair of PNP transistors
mounted in a single PDIP package. The monolithic dual
chip design reduces parasitics and gives better
performance while ensuring extremely tight matching.
The LS132 is a direct replacement for discontinued
Intersil IT132.
FEATURES
Direct Replacement for INTERSIL IT132
HIGH hFE @ LOW CURRENT
OUTPUT CAPACITANCE
VBE tracking
ABSOLUTE MAXIMUM RATINGS 1
≥ 80 @ 10µA
≤ 2.0pF
≤ 20µV°C
The 8 Pin PDIP provides ease of manufacturing, and
@ 25°C (unless otherwise noted)
the symmetrical pinout prevents improper orientation.
Maximum Temperatures
(See Packaging Information).
Storage Temperature
Operating Junction Temperature
‐65°C to +200°C
‐55°C to +150°C
Maximum Power Dissipation
LS132 Features:
High hfe at low current
Tight matching
Tight VBE tracking
Low Output Capacitance
Continuous Power Dissipation (One side)
Continuous Power Dissipation (Both sides)
Linear Derating factor (One side)
Linear Derating factor (Both sides)
Maximum Currents
250mW
500mW
2.3mW/°C
4.3mW/°C
Collector Current
10mA
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
|VBE1 – VBE2 |
Base Emitter Voltage Differential
‐‐ ‐‐ 5 mV
IC = 10µA, VCE = 5V
∆|(VBE1 – VBE2)| / ∆T Base Emitter Voltage Differential
Change with Temperature
‐‐ ‐‐ 20 µV/°C
IC = 10µA, VCE = 5V
TA = ‐55°C to +125°C
|IB1 – IB2 |
Base Current Differential
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
Click To BuyBVCBO
Collector to Base Voltage
45
‐‐ ‐‐ 25
TYP.
‐‐
MAX.
‐‐
UNITS
V
nA IC = 10µA, VCE = 5V
CONDITIONS
IC = 10µA, IE = 0
BVCEO
Collector to Emitter Voltage
45 ‐‐ ‐‐ V
BVEBO Emitter‐Base Breakdown Voltage 6.2 ‐‐ ‐‐ V
BVCCO
Collector to Collector Voltage
60 ‐‐ ‐‐ V
IC = 10µA, IB = 0
IE = 10µA, IC = 02
IC = 10µA, IE = 0
hFE
DC Current Gain
80 ‐‐ ‐‐
IC = 10µA, VCE = 5V
100 ‐‐
‐‐
IC = 1.0mA, VCE = 5V
VCE(SAT)
Collector Saturation Voltage
‐‐ ‐‐ 0.5 V
IC = 0.5mA, IB = 0.05mA
IEBO
Emitter Cutoff Current
‐‐ ‐‐ 1 nA
IC = 0, VEB = 3V
ICBO
Collector Cutoff Current
‐‐ ‐‐ 1 nA
IE = 0, VCB = 45V
COBO
Output Capacitance
‐‐ ‐‐ 2 pF
IE = 0, VCB = 5V
CC1C2
IC1C2
Collector to Collector Capacitance
Collector to Collector Leakage Current
‐‐
‐‐
‐‐ 4 pF
‐‐ 10 nA
VCC = 0V
VCC = ±60V
fT
Current Gain Bandwidth Product 110 ‐‐
‐‐ MHz
IC = 1mA, VCE = 5V
NF
Narrow Band Noise Figure
‐‐ ‐‐ 3 dB IC = 100µA, VCE = 5V, BW=200Hz, RG= 10KΩ,
f = 1KHz
Notes:
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA.
Available Packages:
LS132 in PDIP
LS132 available as bare die
Please contact Micross for full package and die dimensions:
Email: [email protected]
Web: www.micross.com/distribution.aspx
PDIP (Top View)
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
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