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PDF LS311 Data sheet ( Hoja de datos )
| Número de pieza | LS311 | |
| Descripción | Ultra Match | |
| Fabricantes | Micross | |
| Logotipo |  |
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LS311
MONOLITHIC DUAL
NPN TRANSISTOR
Linear Systems High Voltage Super-Beta Monolithic Dual NPN
The LS311 is a monolithic pair of NPN transistors
mounted in a single P-DIP package. The monolithic
dual chip design reduces parasitics and gives better
performance while ensuring extremely tight matching.
The 8 Pin P-DIP provides ease of manufacturing, and
the symmetrical pinout prevents improper orientation.
FEATURES
HIGH GAIN
TIGHT VBE MATCHING
HIGH ft
ABSOLUTE MAXIMUM RATINGS 1
@ 25°C (unless otherwise noted)
hFE ≥ 150 @ 10µA‐1mA
|VBE1 – VBE2 |= 0.2mV TYP.
250MHz TYP. @ 1mA
(See Packaging Information).
Maximum Temperatures
Storage Temperature
‐65°C to +200°C
Operating Junction Temperature
‐55°C to +150°C
LS311 Features:
Maximum Power Dissipation
Continuous Power Dissipation (One side)
250mW
Very high gain
Tight matching
Low Output Capacitance
Continuous Power Dissipation (Both sides)
Linear Derating factor (One side)
Linear Derating factor (Both sides)
500mW
2.3mW/°C
4.3mW/°C
Maximum Currents
Collector Current
10mA
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
|VBE1 – VBE2 |
Base Emitter Voltage Differential
‐‐ 0.4
1
mV
IC = 10µA, VCE = 5V
∆|(VBE1 – VBE2)| / ∆T
|IB1 – IB2 |
Base Emitter Voltage Differential
Change with Temperature
Base Current Differential
‐‐ 1
5 µV/°C
IC = 10µA, VCE = 5V
TA = ‐55°C to +125°C
‐‐ ‐‐ 10 nA
IC = 10µA, VCE = 5V
|∆ (IB1 – IB2)|/°C
Base Current Differential
Change with Temperature
hFE1 /hFE2
DC Current Gain Differential
ClickELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
To‐‐ ‐‐
‐‐ 5
Buy0.5 nA/°C
‐‐ %
IC = 10µA, VCE = 5V
TA = ‐55°C to +125°C
IC = 10µA, VCE = 5V
SYMBOL
CHARACTERISTICS
MIN.
TYP.
MAX. UNITS
CONDITIONS
BVCBO
Collector to Base Voltage
45 ‐‐ ‐‐ V
BVCEO
Collector to Emitter Voltage
45 ‐‐ ‐‐ V
BVEBO Emitter‐Base Breakdown Voltage 6.2 ‐‐ ‐‐ V
BVCCO
Collector to Collector Voltage
100 ‐‐
‐‐
V
150 ‐‐
‐‐
hFE
DC Current Gain
150 ‐‐
‐‐
IC = 10µA, IE = 0
IC = 10µA, IB = 0
IE = 10µA, IC = 02
IC = 10µA, IE = 0
IC = 10µA, VCE = 5V
IC = 100µA, VCE = 5V
150 ‐‐
‐‐
IC = 1mA, VCE = 5V
VCE(SAT)
Collector Saturation Voltage
‐‐ ‐‐ 0.25 V
IC = 1mA, IB = 0.1mA
IEBO
Emitter Cutoff Current
‐‐ ‐‐ 0.2 nA
IE = 0, VCB = 3V
ICBO
Collector Cutoff Current
‐‐ ‐‐ 0.2 nA
IE = 0, VCB = 30V
COBO
Output Capacitance
‐‐ ‐‐ 2 pF
IE = 0, VCB = 5V
CC1C2
Collector to Collector Capacitance
‐‐
‐‐
2 pF
VCC = 0V
IC1C2
Collector to Collector Leakage Current
‐‐
‐‐ 0.5 nA
VCC = ±45V
fT
Current Gain Bandwidth Product 200 ‐‐
‐‐ MHz
IC = 1mA, VCE = 5V
NF
Narrow Band Noise Figure
‐‐ ‐‐ 3 dB IC = 100µA, VCE = 5V, BW=200Hz, RG= 10KΩ,
f = 1KHz
Notes:
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA.
P-DIP (Top View)
Available Packages:
LS311 in P-DIP
LS311 available as bare die
Please contact Micross for full package and die dimensions:
Email: [email protected]
Web: www.micross.com/distribution.aspx
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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