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PDF LS318 Data sheet ( Hoja de datos )
| Número de pieza | LS318 | |
| Descripción | Log Conformance | |
| Fabricantes | Micross | |
| Logotipo |  |
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LS318
MONOLITHIC DUAL
NPN TRANSISTOR
Linear Systems Log Conformance Monolithic Dual NPN
The LS318 is a monolithic pair of NPN transistors
mounted in a single P-DIP package. The monolithic
dual chip design reduces parasitics and is ideal for use
in logging applications. See LS358 for PNP.
FEATURES
LOG CONFORMANCE
ABSOLUTE MAXIMUM RATINGS 1
@ 25°C (unless otherwise noted)
∆re = 1Ω TYP.
The 8 Pin P-DIP provides ease of manufacturing, and
the symmetrical pinout prevents improper orientation.
Maximum Temperatures
Storage Temperature
‐65°C to +200°C
Operating Junction Temperature
‐55°C to +150°C
(See Packaging Information).
Maximum Power Dissipation
Continuous Power Dissipation (One side)
250mW
LS318 Features:
Continuous Power Dissipation (Both sides)
Linear Derating factor (One side)
500mW
2.3mW/°C
Tight matching
Low Output Capacitance
Linear Derating factor (Both sides)
Maximum Currents
Collector Current
4.3mW/°C
10mA
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
|VBE1 – VBE2 |
Base Emitter Voltage Differential
‐‐ 0.4
1
mV
IC = 10µA, VCE = 5V
∆|(VBE1 – VBE2)| / ∆T Base Emitter Voltage Differential
Change with Temperature
‐‐ 1
5 µV/°C
IC = 10µA, VCE = 5V
TA = ‐55°C to +125°C
|IB1 – IB2 |
Base Current Differential
‐‐ ‐‐ 10 nA
IC = 10µA, VCE = 5V
|∆ (IB1 – IB2)|/°C Base Current Differential
‐‐ ‐‐ 0.5 nA/°C
IC = 10µA, VCE = 5V
Change with Temperature
TA = ‐55°C to +125°C
hFE1 /hFE2
DC Current Gain Differential
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
Click To Buy∆re
Log Conformance
‐‐
‐‐ 5
‐‐
TYP.
‐‐
MAX.
1.5
UNITS
Ω
% IC = 10µA, VCE = 5V
CONDITIONS
IC = 10‐100‐1000µA, VCE = 5V
BVCBO
Collector to Base Voltage
25 ‐‐ ‐‐ V
IC = 10µA, IE = 0
BVCEO
Collector to Emitter Voltage
25 ‐‐ ‐‐ V
BVEBO Emitter‐Base Breakdown Voltage 6.2 ‐‐ ‐‐ V
IC = 10µA, IB = 0
IE = 10µA, IC = 02
BVCCO
Collector to Collector Voltage
45 ‐‐ ‐‐ V
IC = 10µA, IE = 0
150 ‐‐ 600
IC = 10µA, VCE = 5V
hFE
DC Current Gain
150 ‐‐ 600
IC = 100µA, VCE = 5V
150 ‐‐
‐‐
IC = 1mA, VCE = 5V
VCE(SAT)
Collector Saturation Voltage
‐‐ ‐‐ 0.25 V
IC = 1mA, IB = 0.1mA
IEBO
Emitter Cutoff Current
‐‐ ‐‐ 0.2 nA
IC = 0, VEB = 3V
ICBO
Collector Cutoff Current
‐‐ ‐‐ 0.2 nA
IE = 0, VCB = 20V
COBO
Output Capacitance
‐‐ ‐‐ 2 pF
IE = 0, VCB = 3V
CC1C2
Collector to Collector Capacitance
‐‐
‐‐
2 pF
VCC = 0V
IC1C2
Collector to Collector Leakage Current
‐‐
‐‐ 0.5 nA
fT
Current Gain Bandwidth Product 200 ‐‐
‐‐ MHz
VCC = ±45V
IC = 1mA, VCE = 5V
NF
Narrow Band Noise Figure
‐‐ ‐‐ 3 dB IC = 100µA, VCE = 5V, BW=200Hz, RG= 10KΩ,
f = 1KHz
Notes:
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA.
P-DIP (Top View)
Available Packages:
LS318 in P-DIP
LS318 available as bare die
Please contact Micross for full package and die dimensions:
Email: [email protected]
Web: www.micross.com/distribution.aspx
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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