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PDF LS3250A Data sheet ( Hoja de datos )
| Número de pieza | LS3250A | |
| Descripción | Ultra Match | |
| Fabricantes | Micross | |
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LS3250C
MONOLITHIC DUAL
NPN TRANSISTOR
Linear Systems Log Conformance Monolithic Dual NPN
The LS3250C is a monolithic pair of NPN transistors
mounted in a single P-DIP package. The monolithic
FEATURES
TIGHT MATCHING
≤ 10mV
dual chip design reduces parasitics and is ideal for use
in tracking applications.
THERMAL TRACKING
ABSOLUTE MAXIMUM RATINGS 1
≤ 15µV / °C
The 8 Pin P-DIP provides ease of manufacturing, and
the symmetrical pinout prevents improper orientation.
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
‐65°C to +150°C
(See Packaging Information).
Operating Junction Temperature
‐55°C to +150°C
LS3250C Features:
Maximum Power Dissipation
Continuous Power Dissipation
TBD
Tight matching
Low Output Capacitance
Maximum Currents
Collector Current
Maximum Voltage
50mA
Collector to Collector Voltage
80V
MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN TYP MAX UNITS
CONDITIONS
|VBE1 – VBE2 |
Base Emitter Voltage Differential
‐‐ ‐‐ 10 mV
IC = 10mA, VCE = 5V
∆|(VBE1 – VBE2)| / ∆T Base Emitter Voltage Differential
Change with Temperature
‐‐ ‐
15 µV/°C
IC = 10µA, VCE = 5V
TA = ‐40°C to +85°C
|IB1 – IB2 |
Base Current Differential
‐‐ ‐‐ 10 nA
IC = 10µA, VCE = 5V
|∆ (IB1 – IB2)|/ ∆T Base Current Differential
‐‐ ‐‐ 1.0 nA/°C
IC = 10µA, VCE = 5V
Change with Temperature
TA = ‐40°C to +85°C
hFE1 /hFE2
DC Current Gain Differential
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
Click To BuyBVCBO
Collector to Base Voltage
20
‐‐ ‐‐ 15
TYP.
‐‐
MAX.
‐‐
UNITS
V
% IC = 10µA, VCE = 5V
CONDITIONS
IC = 10mA, IE = 0
BVCEO
Collector to Emitter Voltage
20 ‐‐ ‐‐ V
BVEBO2 Emitter‐Base Breakdown Voltage 6.2 ‐‐ ‐‐ V
IC = 10µA, IB = 0
IE = 10µA, IC = 0
BVCCO
Collector to Collector Voltage
80 ‐‐ ‐‐ V
IC = 10µA, IE = 0
50 ‐‐ ‐‐
IC = 10µA, VCE = 5V
hFE
DC Current Gain
40 ‐‐ ‐‐
IC = 100µA, VCE = 5V
40 ‐‐ ‐‐
IC = 1mA, VCE = 5V
VCE(SAT)
Collector Saturation Voltage
‐‐ ‐‐ 1.2 V
IC = 100mA, IB = 10mA
IEBO
Emitter Cutoff Current
‐‐ ‐‐ 0.2 nA
IC = 0A, VCB = 3V
ICBO
Collector Cutoff Current
‐‐ ‐‐ 0.2 nA
IE = 0A, VCB = 20V
COBO
Output Capacitance
‐‐ ‐‐ 2 pF
IE = 0A, VCB = 10V
IC1C2
Collector to Collector Leakage Current
‐‐
‐‐
1 nA
VCC = ±80V
fT Current Gain Bandwidth Product ‐‐ ‐‐ 600 MHz
IC = 1mA, VCE = 5V
NF
Narrow Band Noise Figure
‐‐ ‐‐ 3 dB IC = 100µA, VCE = 5V, BW=200Hz, RB= 10Ω,
f = 1KHz
Notes:
1. Absolute Maximum ratings are limiting values above which serviceability may be impaired
2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA.
P-DIP (Top View)
Available Packages:
LS3250C in P-DIP
LS3250C available as bare die
Please contact Micross for full package and die dimensions:
Email: [email protected]
Web: www.micross.com/distribution.aspx
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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