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Número de pieza | LSU404 | |
Descripción | Low Noise | |
Fabricantes | Micross | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de LSU404 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
No Preview Available ! LSU404
LOW NOISE, LOW DRIFT
MONOLITHIC DUAL
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix U404 with LSU404
The U404/ LSU404 is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET
The LSU404 is a high-performance monolithic dual
JFET featuring extremely low noise, tight offset voltage
and low drift over temperature specifications, and is
targeted for use in a wide range of precision
instrumentation applications. The LSU404 features a 5-
mV offset and 10-µV/°C drift. The LSU404 is a direct
replacement for discontinued Siliconix U404.
FEATURES
LOW DRIFT
LOW NOISE
LOW PINCHOFF
ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted)
| V GS1‐2 / T| = 10µV/°C TYP.
en = 6nV/Hz @ 10Hz TYP.
Vp = 2.5V TYP.
The hermetically sealed TO-71 & TO-78 packages are
well suited for military applications.
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
‐65°C to +150°C
+150°C
(See Packaging Information).
U404 / LSU404 Applications:
Maximum Voltage and Current for Each Transistor – Note 1
‐VGSS
Gate Voltage to Drain or Source
‐VDSO
Drain to Source Voltage
‐IG(f) Gate Forward Current
Maximum Power Dissipation
50V
50V
10mA
Wideband Differential Amps
High-Speed,Temp-Compensated Single-
Device Dissipation @ Free Air – Total 300mW
Ended Input Amps
High-Speed Comparators
Impedance Converters and vibrations
detectors.
MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED
SYMBOL
CHARACTERISTICS VALUE UNITS CONDITIONS
| V GS1‐2 / T| max.
DRIFT VS.
TEMPERATURE
25 µV/°C VDG=10V, ID=200µA
TA=‐55°C to +125°C
| V GS1‐2 | max.
OFFSET VOLTAGE 15
mV VDG=10V, ID=200µA
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
TYP. MAX.
UNITS
CONDITIONS
BVGSS
BVGGO
YfSS
ClickYfS
Breakdown Voltage
Gate‐To‐Gate Breakdown
TRANSCONDUCTANCE
Full Conduction
Typical Operation
50
±50
2000
1000
|YFS1‐2 / Y FS|
Mismatch
‐‐
To Buy60 ‐‐
‐‐ ‐‐
‐‐ 7000
‐‐ 2000
V
V
µmho
µmho
VDS = 0 ID=1nA
I G= 1nA ID= 0 IS= 0
VDG= 10V VGS= 0V f = 1kHz
VDG= 15V ID= 200µA f = 1kHz
0.6 3
%
DRAIN CURRENT
IDSS
Full Conduction
0.5 ‐‐ 10
mA
VDG= 10V VGS= 0V
|IDSS1‐2 / IDSS| Mismatch at Full Conduction
GATE VOLTAGE
‐‐
1 5
%
VGS(off) or Vp
VGS(on)
Pinchoff voltage
Operating Range
GATE CURRENT
‐0.5 ‐‐ ‐2.5
‐‐ ‐‐ ‐2.3
V VDS= 15V ID= 1nA
V VDS=15V ID=200µA
‐IGmax.
Operating
‐‐ ‐4 ‐15
pA
VDG= 15V ID= 200µA
‐IGmax.
High Temperature
‐‐ ‐‐ ‐10
nA TA= +125°C
‐IGSSmax.
At Full Conduction
‐‐ ‐‐ 100
pA
VDS =0
‐IGSSmax.
High Temperature
OUTPUT CONDUCTANCE
5
5 5
pA
VDG= 15V TA= +125°C
YOSS Full Conduction ‐‐
YOS Operating ‐‐
COMMON MODE REJECTION
‐‐ 20
0.2 2
µmho
µmho
VDG= 10V VGS= 0V
VDG= 15V ID= 500µA
CMR
‐20 log | V GS1‐2/ V DS|
95 ‐‐ ‐‐
dB
VDS = 10 to 20V ID=30µA
NOISE
VDS= 15V VGS= 0V RG= 10M
NF
Figure
‐‐ ‐‐ 0.5
dB
f= 100Hz NBW= 6Hz
en
Voltage
‐‐
20 ‐‐
nV/√Hz
VDS=15V ID=200µA f=10Hz NBW=1Hz
CAPACITANCE
CISS
Input
‐‐ ‐‐ 8
pF VDS= 15V ID= 200µA f= 1MHz
CRSS
Reverse Transfer
‐‐ ‐‐ 1.5
pF
Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired
TO-71 / TO-78 (Top View)
Micross Components Europe
Available Packages:
U404 / LSU404 in TO-71 & TO-78
U404 / LSU404 available as bare die
Please cowntwactwM.icDroasstafoSr hfulel peatc4kUag.ecaonmd die dimensions
Tel: +44 1603 788967
Email: [email protected]
Web: http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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Páginas | Total 1 Páginas | |
PDF Descargar | [ Datasheet LSU404.PDF ] |
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