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부품번호 | U423 기능 |
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기능 | Low Leakage | ||
제조업체 | Micross | ||
로고 | |||
전체 1 페이지수
U423
HIGH INPUT IMPEDANCE
MONOLITHIC DUAL
N-CHANNEL JFET
Linear Systems replaces discontinued Siliconix U423
The U423 is a high input impedance Monolithic Dual N-Channel JFET
The U423 monolithic dual n-channel JFET is designed
to provide very high input impedance for differential
amplification and impedance matching. Among its
many unique features, this series offers operating gate
current specified at -250 fA. The U423 is a direct
replacement for discontinued Siliconix U423.
FEATURES
HIGH INPUT IMPEDANCE
HIGH GAIN
LOW POWER OPERATION
ABSOLUTE MAXIMUM RATINGS
@ 25°C (unless otherwise noted)
IG = 0.25pA MAX
gfs = 120µmho MIN
VGS(OFF) = 2V MAX
The hermetically sealed TO-71 & TO-78 packages are
well suited for military applications. The 8 Pin P-DIP
and 8 Pin SOIC provide ease of manufacturing, and the
symmetrical pinout prevents improper orientation.
Maximum Temperatures
Storage Temperature
‐65°C to +150°C
Operating Junction Temperature
+150°C
Maximum Voltage and Current for Each Transistor – Note 1
(See Packaging Information).
‐VGSS
‐VDSO
‐IG(f)
Gate Voltage to Drain or Source
Drain to Source Voltage
Gate Forward Current
40V
40V
10mA
U423 Applications:
Maximum Power Dissipation
Device Dissipation @ Free Air – Total 400mW @ +125°C
Ultra Low Input Current Differential Amps
High-Speed Comparators
Impedance Converters
MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED
SYMBOL
CHARACTERISTICS VALUE UNITS CONDITIONS
|∆V GS1‐2 /∆T|max.
| V GS1‐2 | max.
DRIFT VS.
TEMPERATURE
OFFSET VOLTAGE
40 µV/°C VDG=10V, ID=30µA
TA=‐55°C to +125°C
25 mV VDG=10V, ID=30µA
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTICS
MIN.
TYP. MAX.
UNITS
CONDITIONS
BVGSS
Breakdown Voltage
40 60 ‐‐
V
VDS = 0 IG =1nA
BVGGO
YfSS
YfS
Click
Gate‐To‐Gate Breakdown
TRANSCONDUCTANCE
Full Conduction
Typical Operation
DRAIN CURRENT
40
300
120
IDSS
Full Conduction
60
To Buy‐‐ ‐‐
‐‐ 1500
200 350
V
µmho
µmho
IG = 1µA ID = 0 IS= 0
VDS = 10V VGS = 0V f = 1kHz
VDG = 10V ID = 30µA f = 1kHz
‐‐ 1000
µA
VDS = 10V VGS = 0V
GATE VOLTAGE
VGS(off)
Pinchoff voltage
‐‐ ‐‐ 2.0
V
VDS = 10V ID = 1nA
VGS
Operating Range
‐‐ ‐‐ 1.8
V VDG = 10V ID = 30µA
GATE CURRENT
IGmax.
‐IGmax.
IGSSmax.
‐IGSSmax.
Operating
High Temperature
At Full Conduction
High Temperature
‐‐ ‐‐ .25
‐‐ ‐‐ 250
‐‐ ‐‐ 1.0
‐‐ ‐‐ 1.0
pA VDG = 10V ID = 30µA
pA TA = +125°C
pA VDS = 0V VGS = 20V
nA TA = +125°C
OUTPUT CONDUCTANCE
YOSS Full Conduction ‐‐
YOS Operating ‐‐
COMMON MODE REJECTION
‐‐ 10
0.1 3.0
µmho
µmho
VDS = 10V VGS = 0V
VDG = 10V ID = 30µA
CMR
‐20 log | ∆V GS1‐2/ ∆VDS|
‐‐
90 ‐‐
‐20 log | ∆V GS1‐2/ ∆VDS| ‐‐ 90 ‐‐
NOISE
NF Figure ‐‐ ‐‐ 1
dB ∆VDS = 10 to 20V ID = 30µA
dB ∆VDS = 5 to 10V ID = 30µA
VDG = 10V ID = 30µA RG = 10MΩ
dB f = 10Hz
en
Voltage
‐‐
20 70
nV/√Hz
VDG = 10V ID = 30µA f = 10Hz
‐‐ 10 ‐‐
VDG = 10V ID = 30µA f = 1KHz
CAPACITANCE
CISS Input
CRSS Reverse Transfer
‐‐ ‐‐ 3.0
‐‐ ‐‐ 1.5
pF
pF
VDS= 10V VGS = 0 f = 1MHz
Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired
Available Packages:
TO-71 / TO-78 (Top View)
P-DIP / SOIC (Top View)
U423 in TO-71 & TO-78
U423 in PDIP & SOIC
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Email: [email protected]
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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다운로드 | [ U423.PDF 데이터시트 ] |
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
U420B | IRFU420B | Fairchild |
U421 | N-Channel Dual JFET | Calogic LLC |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |