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Número de pieza | IDB06E60 | |
Descripción | Fast Switching EmCon Diode | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IDB06E60 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! Fast Switching EmCon Diode
Feature
• 600 V EmCon technology
• Fast recovery
• Soft switching
• Low reverse recovery charge
• Low forward voltage
• 175°C operating temperature
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• Easy paralleling
IDP06E60
IDB06E60
Product Summary
VRRM
IF
VF
Tjmax
600
6
1.5
175
V
A
V
°C
P-TO220-3.SMD
P-TO220-2-2.
Type
IDP06E60
IDB06E60
Package
Ordering Code
P-TO220-2-2. Q67040-S4480
P-TO220-3.SMD Q67040-S4481
Marking
D06E60
D06E60
Pin 1
C
NC
PIN 2
A
C
PIN 3
-
A
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Repetitive peak reverse voltage
Continous forward current
TC=25°C
TC=90°C
VRRM
IF
Surge non repetitive forward current
TC=25°C, tp=10 ms, sine halfwave
Maximum repetitive forward current
IFSM
IFRM
TC=25°C, tp limited by Tjmax, D=0.5
Power dissipation
Ptot
TC=25°C
TC=90°C
Operating and storage temperature
Soldering temperature
1.6mm(0.063 in.) from case for 10s
Tj , Tstg
TS
Value
600
14.7
10
29
22
46.9
26.6
-55...+175
255
Unit
V
A
W
°C
°C
Rev.2
Page 1
2003-07-31
1 page IDP06E60
IDB06E60
5 Typ. reverse recovery time
trr = f (diF/dt)
parameter: VR = 400V, Tj = 125°C
300
ns
200
12A
6A
3A
150
100
50
2000 300 400 500 600 A/µs 800
diF/dt
7 Typ. reverse recovery current
Irr = f (diF/dt)
parameter: VR = 400V, Tj = 125°C
11
A
9
12A
6A
3A
8
7
6
5
4
2300 300 400 500 600 A/µs 800
diF/dt
6 Typ. reverse recovery charge
Qrr=f(diF/dt)
parameter: VR = 400V, Tj = 125 °C
550
nC
12A
500
475
450
425
400
375 6A
350
325
300 3A
275
252000 300 400 500 600 A/µs 800
diF/dt
8 Typ. reverse recovery softness factor
S = f(diF/dt)
parameter: VR = 400V, Tj = 125°C
11
9
12A
8 6A
3A
7
6
5
4
3
2
1
2000 300 400 500 600 700 800 A/µs 1000
diF/dt
Rev.2
Page 5
2003-07-31
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IDB06E60.PDF ] |
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