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PDF IDD04S60C Data sheet ( Hoja de datos )
| Número de pieza | IDD04S60C | |
| Descripción | Schottky Diode | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IDD04S60C (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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IDD04S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery/ No forward recovery
• No temperature influence on the switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
www.DataSheet4U.net
• Breakdown voltage tested at 5mA2)
Product Summary
V DC
Qc
IF
600 V
8 nC
4A
PG-TO252
3
thinQ! 2G Diode specially designed for fast switching applications like:
• CCM PFC
• Motor Drives
1
2
Type
IDD04S60C
Package
PG-TO252
Marking
D04S60C
Pin 1
n.c.
Pin 2
A
Pin 3
C
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous forward current
RMS forward current
Symbol Conditions
IF
I F,RMS
T C<130 °C
f =50 Hz
Surge non-repetitive forward current,
sine halfwave
I F,SM
T C=25 °C, t p=10 ms
Value
4
5.6
32
Repetitive peak forward current
I F,RM
T j=150 °C,
T C=100 °C, D =0.1
Non-repetitive peak forward current
i ²t value
Repetitive peak reverse voltage
Diode dv/dt ruggedness
Power dissipation
Operating and storage temperature
I F,max T C=25 °C, t p=10 µs
∫i 2dt
T C=25 °C, t p=10 ms
V RRM
dv/ dt V R = 0….480V
P tot T C=25 °C
T j, T stg
18
132
5.1
600
50
37
-55 ... 175
Unit
A
A2s
V
V/ns
W
°C
Rev. 2.0
page 1
2006-04-03
1 page  
9 Typ. C stored energy
E C=f(V R)
IDD04S60C
10 Typ. capacitance charge vs. current slope
Q C=f(di F/dt )5); T j=150 °C; I F≤I F,max
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
100 200 300 400 500 600
V R [V]
10
8
6
4
2
0
100
400 700
di F/dt [A/µs]
1000
Rev. 2.0
page 5
2006-04-03
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet IDD04S60C.PDF ] | |
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