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부품번호 | IDD08SG60C 기능 |
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기능 | Schottky Diode | ||
제조업체 | Infineon Technologies | ||
로고 | |||
전체 7 페이지수
3rd Generation thinQ!TM SiC Schottky Diode
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery / No forward recovery
• Temperature independent switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 20mA2)
• Optimized for high temperature operation
• Lowest Figure of Merit QC/IF
Product Summary
VDC
QC
IF; TC< 130 °C
thinQ! 3G Diode designed for fast switching applications like:
• SMPS e.g.; CCM PFC
• Motor Drives; Solar Applications; UPS
IDD08SG60C
600 V
12 nC
8A
Type
IDD08SG60C
Package
PG-TO252-3
Marking
D08G60C
Pin 1
n.c.
Pin 2
A
Pin 3
C
Maximum ratings
Parameter
Symbol Conditions
Continuous forward current
I F T C<130 °C
Surge non-repetitive forward current, I F,SM
sine halfwave
T C=25 °C, t p=10 ms
T C=150 °C, t p=10 ms
Non-repetitive peak forward current
i ²t value
I F,max
∫i 2dt
T C=25 °C, t p=10 µs
T C=25 °C, t p=10 ms
T C=150 °C, t p=10 ms
Repetitive peak reverse voltage
Diode dv/dt ruggedness
V RRM
dv/ dt
T j=25 °C
VR= 0….480 V
Power dissipation
P tot T C=25 °C
Operating and storage temperature
Soldering temperature, reflow
soldering (max)
T j, T stg
T sold
reflow MSL1
Value
8
42
36
350
9
6.5
600
50
100
-55 ... 175
260
Unit
A
A2s
V
V/ns
W
°C
Rev. 2.4
page 1
2013-02-11
5 Typ. capacitance charge vs. current slope
Q C=f(di F/dt )6); I F≤I F,max
IDD08SG60C
6 Typ. reverse current vs. reverse voltage
I R=f(VR); parameter: T j
14
12
10
8
6
4
2
0
100
400 700
diF/dt [A/µs]
7 Typ. transient thermal impedance
Z thJC=f(t p); parameter: D = t P/T
102
101
100
10-1
10-2
175ºC
150ºC
100ºC
25ºC
-55ºC
1000
10-3
100 200 300 400 500
VR [V]
8 Typ. capacitance vs. reverse voltage
C =f(V R); T C=25 °C, f =1 MHz
600
101 300
250
100
0.5
0.2
10-1
0.05
0.1
0.05
0.02
200
150
100
50
10-2
0
10-6
10-5
10-4
10-3
tP [s]
10-2
10-1
0
10-1
Rev. 2.4
page 4
100 101
VR [V]
102
103
2013-02-11
4페이지 IDD08SG60C
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support , automotive, aviation and
aerospace device or system or to affect the safety or effectiveness of that device or system.
Life support systems are intended to be implanted in the human body and/or maintain
and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Rev. 2.4
page 7
2013-02-11
7페이지 | |||
구 성 | 총 7 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
IDD08SG60C | Schottky Diode | Infineon Technologies |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |