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PDF IDH05S60C Data sheet ( Hoja de datos )

Número de pieza IDH05S60C
Descripción Schottky Diode
Fabricantes Infineon Technologies 
Logotipo Infineon Technologies Logotipo



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No Preview Available ! IDH05S60C Hoja de datos, Descripción, Manual

2ndGeneration thinQ!TM SiC Schottky Diode
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery/ No forward recovery
• No temperature influence on the switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
www.DataSheet4U.net
• Breakdown voltage tested at 5mA2)
Product Summary
V DC
Qc
IF
IDH05S60C
600 V
12 nC
5A
thinQ! 2G Diode specially designed for fast switching applications like:
• CCM PFC
• Motor Drives
Type
Package
Marking
Pin 1
Pin 2
IDH05S60C
PG-TO220-2 D05S60C
C
A
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous forward current
RMS forward current
IF
I F,RMS
Surge non-repetitive forward current,
sine halfwave
I F,SM
T C<140 °C
f =50 Hz
T C=25 °C, t p=10 ms
5
7.5
42
Unit
A
Repetitive peak forward current
I F,RM
T j=150 °C,
T C=100 °C, D =0.1
Non-repetitive peak forward current I F,max T C=25 °C, t p=10 µs
i ²t value
i 2dt
T C=25 °C, t p=10 ms
Repetitive peak reverse voltage
V RRM
Diode dv/dt ruggedness
dv/ dt V R = 0….480V
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
Mounting torque
Soldering temperature,
wavesoldering only allowed at leads
Rev. 2.0
T sold
M3 and M3.5 screws
1.6mm (0.063 in.) from
case for 10s
page 1
21
180
9
600
50
55
-55 ... 175
60
260
A2s
V
V/ns
W
°C
Mcm
°C
2010-04-27

1 page




IDH05S60C pdf
9 Typ. C stored energy
E C=f(V R)
IDH05S60C
10 Typ. capacitance charge vs. current slope
Q C=f(di F/dt )4); T j=150 °C; I FI F,max
7
6
5
4
3
2
1
0
0 100 200 300 400 500 600
V R [V]
14
12
10
8
6
4
2
0
100
400 700
di F/dt [A/µs]
1000
Rev. 2.0
page 5
2010-04-27

5 Page










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