|
|
Datasheet IDH06S60C Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | IDH06S60C | Schottky Diode IDH06S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free |  Infineon Technologies | diode |
IDH Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IDH-20PK1-Sx | 4 Sided .025 sq. Post Headers RN data | | |
| 2 | IDH-50LP-xx | Low Profile Headers RN data | | |
| 3 | IDH02G120C5 | Diode, Rectifier Diode
Silicon Carbide Schottky Diode
IDH02G120C5
5th Generation thinQ!™ 1200 V SiC Schottky Diode
Final Datasheet
Rev. 2.0 2015-07-22
Industrial Power Control
thinQ!TM SiC Schottky Diode
IDH02G120C5
5th Generation thinQ!™ 1200 V SiC Schottky Diode
Features:
Revolutionary semiconductor mat  Infineon diode | | |
| 4 | IDH02SG120 | Schottky Diode IDH02SG120
3rd Generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior • High surge current capability • Pb-free lead Infineon Technologies diode | | |
| 5 | IDH03SG60C | Schottky Diode 3rd Generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark
• No reverse recovery / No forward recovery • Temperature independent switching behavior • High surge current capability • Pb-free lead plating; RoH Infineon Technologies diode | | |
| 6 | IDH04S60C | Schottky Diode IDH04S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free Infineon Technologies diode | | |
| 7 | IDH04SG60C | Schottky Diode 3rd Generation thinQ!TM SiC Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark
• No reverse recovery / No forward recovery • Temperature independent switching behavior • High surge current capability • Pb-free lead plating; RoH Infineon Technologies diode | |
| Esta página es del resultado de búsqueda del IDH06S60C. Si pulsa el resultado de búsqueda de IDH06S60C se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |