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PDF BCP157 Data sheet ( Hoja de datos )
| Número de pieza | BCP157 | |
| Descripción | Medium Power Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BCP157 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Elektronische Bauelemente
BCP157
PNP Silicon
Medium Power Transistor
RoHS Compliant Product
Features
www1..D-a6ta0ShVeoetl4tUV.netCEO
2. 3 Amp continuous current
3. Low saturation voltage
SOT-89
1.BASE
2.COLLECTOR
3.EMITTER
D
D1 A
z$EVROXWHPD[LPXPUDWLQJV 7D °&
Parameter
Symbol
Collector-base voltage
Collector-emitter voltage
VCBO
VCEO
Emitter-base voltage
VEBO
Collector current
IC
Limits
-80
-60
-5
-3
-6
Total power
dissipation
0.5
PC
2
Junction temperature
Tj
Storage temperature
Tstg
∗1 Single pulse, Pw=10ms
∗2 When mounted on a 40×40×0.7 mm ceramic board.
150
−55~+150
Unit
V
V
V
A(DC)
A(Pulse)∗1
W
W ∗2
°C
°C
b1
e
e1
b
C
Symbol
A
b
b1
c
D
D1
E
E1
e
e1
L
Dimensions In Millimeters
Min Max
1.400 1.600
0.320 0.520
0.360 0.560
0.350 0.440
4.400 4.600
1.400 1.800
2.300 2.600
3.940 4.250
1.500TYP
2.900 3.100
0.900 1.100
Dimensions In Inches
Min Max
0.055 0.063
0.013 0.020
0.014 0.022
0.014 0.017
0.173 0.181
0.055 0.071
0.091 0.102
0.155 0.167
0.060TYP
0.114 0.122
0.035 0.043
z(OHFWULFDOFKDUDFWHULVWLFV 7D °&
Parameter
Symbol
Collector-base breakdown voltage BVCBO
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Collector-emitter saturation voltage 1 VCE(sat)1
Collector-emitter saturation voltage 2 VCE(Sat)2
Base-emitter saturation voltage Sat VBE(Sat)
Base-emitter saturation voltage On VBE(On)
Output capacitance
Current Gain - Bandwidth Product
Cob
fT
Switching Time
ton
toff
hFE1
Min.
-80
-60
-5
−
−
−
−
−
−
100
−
−
70
Current Gain
hFE2
hFE3
100
80
hFE4 40
Typ.
−
−
−
−
−
-150
-450
-0.9
-0.8
−
140
40
450
200
200
170
150
Max.
−
−
−
0.1
0.1
-300
-600
-1.25
-1.0
30
−
−
−
300
Unit Conditions
V IC=−100µA, IE=0
V IC=−10mA, IB=0
V IE=−100 µA, IC=0
µA VCB=−60V, IE=0
µA VEB=−4V, IC=0
mV IC=−1A,IB=-100mA
mV IC=-3A,IB=-300mA
V IC=-1A, IB=-100mA
V
pF
MHz
VCE=-2V, IC=-1A
VCB=−10V, IE=0A, f=1MHz
VCE=−5V, IC=-100mA, f=100MHz
ns VCC=-10V, IC=-500mA,
IB1=IB2=-50mA
VCE=-2V, IC=-50mA
VCE=-2V, IC=-500mA
VCE=-2V, IC=-1A
VCE=-2V, IC=-2A
Note: Measured under pulse condition. Pulse width<300us, Duty cycle<2%
Spice parameter data is available upon urquest for this device.
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
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| PDF Descargar | [ Datasheet BCP157.PDF ] | |
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