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PDF BCP4672 Data sheet ( Hoja de datos )
| Número de pieza | BCP4672 | |
| Descripción | NPN Epitaxial Silicon Transistor | |
| Fabricantes | SeCoS | |
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Elektronische Bauelemente
BCP4672
2A, 60V
NPN Epitaxial Silicon Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
www.DTahtaeShBeeCt4PU4.n6e7t 2 is designed for low frequency amplifier applications.
MARKING
4672
Date Code
SOT-89
4
123
A
EC
CLASSIFICATION OF hFE
Product Rank
BCP4672-A
Range
120~240
PACKAGE INFORMATION
Package
MPQ
SOT-89
1K
BCP4672-B
200~400
LeaderSize
7’ inch
B
FG
H
J
D
K
L
REF.
A
B
C
D
E
F
Millimeter
Min.
4.40
3.94
1.40
Max.
4.60
4.25
1.60
2.30 2.60
1.50 1.70
0.89
1.2
REF.
G
H
J
K
L
Millimeter
Min.
0.40
1.50
3.00
Max.
0.58
TYP
TYP
0.32 0.52
0.35 0.44
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Total Power Dissipation
Junction & Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ, TSTG
Ratings
60
50
6
2
5
2
150, -55~150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(sat)*
hFE*
fT
Cob
Min.
60
50
6
-
-
-
120
-
-
*Measured under pulse condition. Pulse width≦380μs, Duty Cycle≦2%.
Typ.
-
-
-
-
-
0.1
-
210
25
Max.
-
-
-
100
100
0.35
400
-
-
Unit
V
V
V
nA
nA
V
MHz
pF
Test Conditions
IC= 50A, IE=0
IC= 1mA, IB=0
IE= 50A, IC=0
VCB= 60V, IE=0
VEB= 5V, IC=0
IC= -1A, IB= 50mA
VCE= 2V, IC= 500mA
VCE= 2V, IC= 500mA, f=100MHz
VCB= 10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
10-Dec-2010 Rev. B
Any changes of specification will not be informed individually.
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