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BD13003B PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 BD13003B
기능 NPN Plastic Encapsulated Transistor
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BD13003B 데이터시트, 핀배열, 회로
Elektronische Bauelemente
BD13003B
1.5A , 700V
NPN Plastic Encapsulated Transistor
FEATURES
Power Switching Applications
www.DataSheet4U.net
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-126
CLASSIFICATION OF ts
Product-Rank BD3DD13003-A1
Range
2-2.5 (µs)
Product-Rank BD3DD13003-B1
Range
3-3.5 (µs)
BD3DD13003-A2
2.5-3 (µs)
BD3DD13003-B2
3.5-4 (µs)
Collector
2
1
Base
3
Emitter
A
E
F
N
L
M
K
B
H
J
C
D
G
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
7.40 7.80
2.50 2.90
10.60 11.00
15.30 15.70
3.70 3.90
3.90 4.10
2.29 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
1.10 1.50
0.45 0.60
0.66 0.86
2.10 2.30
1.17 1.37
3.00 3.20
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
700
400
9
1.5
1.5
150, -55~150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
V(BR)CBO
700
-
-
V IC=5mA, IE=0
Collector to Emitter Breakdown Voltage
V(BR)CEO
400
-
-
V IC=10mA, IB=0
Emitter to Base Breakdown Voltage
V(BR)EBO
9
-
-
V IE=2mA, IC=0
Collector Cut – Off Current
ICBO - - 1 mA VCB=700V, IE=0
Collector Cut – Off Current
ICEO - - 0.5 mA VCE=400V, IB=0
Emitter Cut – Off Current
IEBO - - 1 mA VEB=9V, IC=0
DC Current Gain
hFE (1) 20 - 30
hFE (2)
5
-
-
VCE=5V, IC=0.5A
VCE=5V, IC=1.5A
Collector to Emitter Saturation Voltage
VCE(sat)
-
- 0.6 V IC=1A, IB=250mA
Base to Emitter Saturation Voltage
VBE(sat)
-
- 1.2 V IC=1A, IB=250mA
Transition Frequency
fT 5 - - MHz VCE=10V, IC=100mA, f =1MHz
Fall time
tf - - 0.5 µs IC=1A,IB1= -IB2=0.2A,VCC=100V
http://wwSw.tSoerCaoSgGemtbiHm.ceom/
tS 2 - 4 µAsny chaICng=e2s 5of0spmecAific(aUtioIn9w6il0l n0ot)be informed individually.
23-Jun-2011 Rev. A
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BD13003B

NPN Plastic Encapsulated Transistor

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