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A844 데이터시트 PDF




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부품번호 A844 기능
기능 PNP Transistor - 2SA844
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A844 데이터시트, 핀배열, 회로
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
www.DTathaSehesete4Um.niect onductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003




A844 pdf, 반도체, 판매, 대치품
2SA844
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
IE
PC
Tj
Tstg
Ratings
–55
–55
–5
–100
100
300
150
–55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ
Collector to base breakdown
voltage
V(BR)CBO
–55
Collector to emitter breakdown V(BR)CEO
voltage
–55
Emitter to base breakdown
voltage
V(BR)EBO
–5
Collector cutoff current
ICBO — —
Emitter cutoff current
IEBO — —
DC current transfer ratio
hFE*1
160 —
Collector to emitter saturation VCE(sat)
voltage
–0.1
Base to emitter voltage
VBE — –0.66
Gain bandwidth product
fT
— 200
Collector output capacitance Cob — 2.0
Note: 1. The 2SA844 is grouped by hFE as follows.
C DE
160 to 320 250 to 500 400 to 800
Max
–100
–50
800
–0.5
–0.75
Unit
V
V
V
nA
nA
V
V
MHz
pF
Test conditions
IC = –10 µA, IE = 0
IC = –1 mA, RBE =
IE = –10 µA, IC = 0
VCB = –18 V, IE = 0
VEB = –2 V, IC = 0
VCE = –12 V, IC = –2 mA
IC = –10 mA, IB = –1 mA
VCE = –12 V, IC = –2 mA
VCE = –12 V, IE = –2 mA
VCB = –10 V, IE = 0, f = 1 MHz
See characteristic curves of 2SA836.

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A844 전자부품, 판매, 대치품
2SA844
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
Asia
Japan
: http://semiconductor.hitachi.com/
: http://www.hitachi-eu.com/hel/ecg
: http://sicapac.hitachi-asia.com
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor Hitachi Europe GmbH
(America) Inc.
Electronic Components Group
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San Jose,CA 95134
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Tel: <1> (408) 433-1990 Germany
Fax: <1>(408) 433-0223 Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
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Tel : <65>-538-6533/538-8577
Fax : <65>-538-6933/538-3877
URL : http://www.hitachi.com.sg
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Hitachi Asia Ltd.
Electronic Components Group.
(Taipei Branch Office)
Whitebrook Park
4/F, No. 167, Tun Hwa North Road,
Lower Cookham Road
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Maidenhead
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Tel: <44> (1628) 585000
Fax : <886>-(2)-2718-8180
Fax: <44> (1628) 585160
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
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Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://www.hitachi.com.hk
Copyright © Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0

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