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PDF APTGT400A120G Data sheet ( Hoja de datos )
| Número de pieza | APTGT400A120G | |
| Descripción | IGBT Power Module | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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APTGT400A120G
Phase leg
Fast Trench + Field Stop IGBT®
Power Module
VCES = 1200V
IC = 400A @ Tc = 80°C
www.DataSheet4U.net
G1
VB US
Q1
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
E1 OUT
Q2
G2
E2
0/VB US
G1 VBUS
E1
E2
G2
0/VBUS
OUT
Features
• Fast Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 125°C
Max ratings
1200
560 *
400
800
±20
1785
800A @ 1100V
Unit
V
A
V
W
* Specification of IGBT device but output current must be limited to 500A to not exceed a delta of temperature
greater than 100°C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-5
1 page  
APTGT400A120G
Operating Frequency vs Collector Current
60
50
ZVS
40
ZCS
30
VCE=600V
D=50%
RG=1.2Ω
TJ= 125°C
Tc=75°C
20
10 Hard
switching
0
0 100 200 300 400 500
IC (A)
800
700
600
500
400
300
200
100
0
0
Forward Characteristic of diode
TJ=25°C
TJ=125°C
TJ= 125°C
0.4 0.8 1.2 1.6 2 2.4
VF (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.14
0.12 0.9
Diode
0.1 0.7
0.08 0.5
0.06
0.3
0.04
0.02
0.1
0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
5-5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet APTGT400A120G.PDF ] | |
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