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Número de pieza | APTGT450DU60G | |
Descripción | IGBT Power Module | |
Fabricantes | Microsemi Corporation | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de APTGT450DU60G (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! APTGT450DU60G
Dual common source
Trench + Field Stop IGBT®
Power Module
VCES = 600V
IC = 450A @ Tc = 80°C
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Application
C1 C2
Q1 Q2
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
G1 G2
Features
E1
• Trench + Field Stop IGBT® Technology
E2 - Low voltage drop
- Low tail current
E - Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
G1 C1 E C2
E1
• High level of integration
Benefits
• Stable temperature behavior
E2 • Very rugged
G2 • Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
TC = 25°C
TC = 80°C
ICM Pulsed Collector Current
TC = 25°C
VGE Gate – Emitter Voltage
PD Maximum Power Dissipation
TC = 25°C
600
550
450
600
±20
1750
V
A
V
W
RBSOA Reverse Bias Safe Operating Area
Tj = 150°C 900A @ 550V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-5
1 page APTGT450DU60G
Operating Frequency vs Collector Current
120
VCE=300V
100
ZVS
80 ZCS
D=50%
RG=1Ω
TJ=150°C
Tc=85°C
60
40
20
Hard
switching
0
0 200
400
IC (A)
600
800
Forward Characteristic of diode
1000
800
600
400
200
0
0
TJ=125°C
TJ=150°C
0.4 0.8 1.2
VF (V)
TJ=25°C
1.6 2
0.16
0.14
0.12
0.1
0.08
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Diode
0.9
0.7
0.5
0.06 0.3
0.04
0.02
0
0.1
0.05
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
Rectangular Pulse Duration in Seconds
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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5-5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet APTGT450DU60G.PDF ] |
Número de pieza | Descripción | Fabricantes |
APTGT450DU60 | IGBT Power Module | Advanced Power Technology |
APTGT450DU60G | IGBT Power Module | Microsemi Corporation |
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