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PDF ARF301 Data sheet ( Hoja de datos )

Número de pieza ARF301
Descripción RF POWER MOSFET P-CHANNEL ENHANCEMENT MODE
Fabricantes Microsemi Corporation 
Logotipo Microsemi Corporation Logotipo



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No Preview Available ! ARF301 Hoja de datos, Descripción, Manual

RF POWER MOSFET
P-CHANNEL ENHANCEMENT MODE
www.DTahteaSAheRetF4U30.n1etis a P-CHANNEL RF power transistor in a high efciency angeless package.
It is designed for high voltage operation in narrow band ISM and MRI power ampliers at
frequencies up to 45MHz. The transistor is well matched to the ARF300 N-CHANNEL RF
power transistor making the pair well suited for bridge congurations
ARF301
125V, 300W, 45MHz
• Specied 125 Volt, 27 MHz Characteristics:
Output Power = 300 Watts.
Gain = 15dB (Class E)
Efciency = 80%
• RoHS Compliant
• High Performance
• High Voltage Breakdown and Large SOA
for Superior Ruggedness
• Low Thermal Resistance.
• Capacitance matched with ARF300 N-Channel
Maximum Ratings
Symbol
VDSS
VDGO
ID
VGS
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ TC = 25°C
Gate-Source Voltage
Total Power Dissipation @ TC = 25°C
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063” from Case for 10 Sec.
All Ratings: TC =25°C unless otherwise specied
Ratings
Unit
500
V
500
20 A
±30 V
833 W
-55 to 175
300
°C
Static Electrical Characteristics
Symbol
BVDSS
VDS(ON)
IDSS
IGSS
gfs
VGS(TH)
Parameter
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA)
On State Drain Voltage 1 (ID(ON) = 10A, VGS = 10V)
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 50VDSS, VGS = 0, TC = 125°C)
Gate-Source Leakage Current (VDS = ±30V, VDS = 0V)
Forward Transconductance (VDS = 15V, ID = 10A)
Gate Threshold Voltage (VDS = VGS, ID = 10mA)
Min Typ Max Unit
500
V
8 10
25
μA
250
±100
nA
58
mhos
-2.5 - 4
-5 Volts
Thermal Characteristics
Symbol
RθJC
RθJHS
Parameter
Min Typ Max Unit
Junction to Case
Junction to Sink (High Efciency Thermal Joint Compound and Planar Heat Sink Surface.)
0.15
°C/W
0.27
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com

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