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NVTFS5116PL 데이터시트 PDF




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기능 Power MOSFET ( Transistor )
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NVTFS5116PL 데이터시트, 핀배열, 회로
NVTFS5116PL
Power MOSFET
60 V, 14 A, 52 mW, Single PChannel
Features
Small Footprint (3.3 x 3.3 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
NV Prefix for Automotive and Other Applications Requiring
AECQ101 Qualified Site and Change Controls
These are PbFree Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain Cur-
r2e,n3t,R4Y) Jmb (Notes 1,
Power Dissipation
RYJmb (Notes 1, 2, 3)
Steady
State
Tmb = 25°C
Tmb = 100°C
Tmb = 25°C
Tmb = 100°C
Continuous Drain Cur-
r3e,n4t)RqJA (Notes 1 &
Power Dissipation
RqJA (Notes 1, 3)
Steady
State
TA = 25°C
TA = 100°C
TA = 25°C
TA = 100°C
Pulsed Drain Current TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
ID
PD
ID
PD
IDM
TJ, Tstg
60
±20
14
10
21
10
6
4
3.2
1.6
126
55 to
+175
V
V
A
W
A
W
A
°C
Source Current (Body Diode)
IS 17 A
Single Pulse DraintoSource Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL(pk) = 30 A, L = 0.1 mH, RG = 25 W)
EAS 45 mJ
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol Value Unit
JunctiontoMounting Board (top) Steady
State (Note 2 and 3)
RYJmb
7.2 °C/W
JunctiontoAmbient Steady State (Note 3)
RqJA
47
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD5112 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surfacemounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
http://onsemi.com
V(BR)DSS
60 V
RDS(on) MAX
52 mW @ 10 V
72 mW @ 4.5 V
ID MAX
14 A
PChannel MOSFET
D (58)
G (4)
1
WDFN8
(m8FL)
CASE 511AB
S (1,2,3)
MARKING DIAGRAM
1
SD
S 5116 D
S AYWWG D
GGD
5116
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NVTFS5116PLTAG WDFN8 1500/Tape & Reel
(PbFree)
NVTFS5116PLTWG WDFN8 5000/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
January, 2011 Rev. 0
1
Publication Order Number:
NVTFS5116PL/D




NVTFS5116PL pdf, 반도체, 판매, 대치품
NVTFS5116PL
TYPICAL CHARACTERISTICS
1800
1600
1400
1200
VGS = 0 V
TJ = 25°C
Ciss
1000
800
600
400
200 Coss
0 Crss
0 10 20 30 40 50
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
60
1000
100
VDD = 48 V
ID = 7 A
VGS = 4.5 V
tf
tr
td(off)
10 td(on)
10
QT
8
6
4 Qgs
Qgd
2
VDS = 48 V
ID = 7 A
TJ = 25°C
0
0 5 10 15 20
Qg, TOTAL GATE CHARGE (nC)
Figure 8. GatetoSource Voltage vs. Total
Charge
25
40
VGS = 0 V
TJ = 25°C
30
20
10
1.0
1
10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
0
0.5 0.6 0.7 0.8 0.9 1.0
VSD, SOURCETODRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
1000
100
VGS = 10 V
Single Pulse
TC = 25°C
10
10 ms
100 ms
10 ms
1 ms
1
RDS(on) Limit
Thermal Limit
Package Limit
0.1
0.1
1
dc
10 100
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
45
ID = 30 A
30
15
0
25 50 75 100 125 150 175
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
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NVTFS5116PL

Power MOSFET ( Transistor )

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