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PDF 2SA949 Data sheet ( Hoja de datos )

Número de pieza 2SA949
Descripción TRANSISTOR (DRIVER STAGE AUDIO AMPLIFIER/ HIGH VOLTAGE SWITCHING APPLICATIONS)
Fabricantes Toshiba Semiconductor 
Logotipo Toshiba Semiconductor Logotipo



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No Preview Available ! 2SA949 Hoja de datos, Descripción, Manual

TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA949
Driver-Stage Audio Amplifier Applications
High-Voltage Switching Applications
2SA949
Unit: mm
High breakdown voltage: VCEO = 150 V
Low output capacitance: Cob = 4.0 pF (typ.)
High transition frequency: fT = 120 MHz (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
150
V
Collector-emitter voltage
VCEO
150
V
Emitter-base voltage
VEBO 5 V
Collector current
IC 50 mA
Base current
IB 5 mA
Collector power dissipation
Junction temperature
Storage temperature range
PC 800 mW
Tj 150 °C
Tstg
55 to 150
°C
JEDEC
JEITA
TO-92MOD
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2009-12-21
Free Datasheet http://www.Datasheet4U.com

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