(PDF) KDV202E Datasheet - SILICON EPITAXIAL PLANAR DIODE

Número de pieza	KDV202E
Descripción	SILICON EPITAXIAL PLANAR DIODE
Fabricantes	KEC
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No Preview Available ! SEMICONDUCTOR TECHNICAL DATA FM RADIO BAND TUNING APPLICATION. FEATURES High Capacitance Ratio : C0.2V/C2.3V =2.5(Min.) Low Series Resistance : rs=0.6 (Max.) Small Package : ESC. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range SYMBOL VR Tj Tstg RATING 6 150 -55 150 UNIT V KDV202E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE C 1 2 D 1. ANODE 2. CATHODE E F DIM A B C D E F MILLIMETERS 1.60+_ 0.10 1.20+_ 0.10 0.80+_ 0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.05 Marking Type Name ESC ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Current Capacitance Capacitance Ratio IR1 IR2 C0.2V C2.3V C0.2V/C2.3V Series Resistance rS TEST CONDITION VR=6V VR=6V, Tj=85 VR=0.2V, f=1MHz VR=2.3V, f=1MHz - CT=30pF, f=100MHz CLASSIFICATION OF CAPACITANCE RATIO GRADE GRADE CAPACITANCE (C2.3V) UNIT (NONE) 7.2 11.2 A 7.2~8.7 B 8.3 9.7 pF C 9.3~10.7 D 10.3~11.2 MARK FA F1 F2 F3 F4 MIN. - - 28.2 7.2 2.5 - TYP. - - - - - 0.35 MAX. 10 100 33.5 11.2 - 0.6 UNIT nA pF 2005. 5. 10 Revision No : 3 1/2 1 page

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PDF KDV202E Data sheet ( Hoja de datos )