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부품번호 H04N60 기능
기능 N-Channel Power Field Effect Transistor
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H04N60 데이터시트, 핀배열, 회로
www.DataSheet4U.net
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200404
Issued Date : 2004.07.01
Revised Date : 2005.09.28
Page No. : 1/5
H04N60 Series
N-Channel Power Field Effect Transistor
Description
This advanced high voltage MOSFET is designed to withstand high
energy in the avalanche mode and switch efficiently. This new high energy
device also offers a drain-to-source diode with fast recovery time.
Designed for high voltage, high speed switching applications such as
power suplies, converters, power motor controls and bridge circuits.
Features
Higher Current Rating
Lower RDS(on)
Lower Capacitances
Lower Total Gate Charge
Tighter VSD Specifications
Avalanche Energy Specified
Absolute Maximum Ratings
H04N60 Series Pin Assignment
Tab
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3
2
1
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
3
2
1
D
H04N60 Series
Symbol:
G
S
Symbol
ID
IDM
VGS
PD
Tj, Tstg
EAS
TL
Parameter
Drain to Current (Continuous)
Drain to Current (Pulsed)
Gate-to-Source Voltage (Continue)
Total Power Dissipation (TC=25oC)
H04N60E (TO-220AB)
H04N60F (TO-220FP)
Derate above 25°C
H04N60E (TO-220AB)
H04N60F (TO-220FP)
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25°C
(VDD=100V, VGS=10V, IL=2A, L=10mH, RG=25)
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 10 seconds
Value
4
16
±30
70
30
0.56
0.2
-55 to 150
250
260
Units
A
A
V
W
W/°C
°C
mJ
°C
H04N60E, H04N60F
HSMC ProdwuwctwS.pDeactiafiSchaetieotn4U.net




H04N60 pdf, 반도체, 판매, 대치품
www.DataSheet4U.net
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200404
Issued Date : 2004.07.01
Revised Date : 2005.09.28
Page No. : 4/5
TO-220AB Dimension
A
D
B
E
F
H
I
G
Tab
P
L
3
2
1
M
O
J
3-Lead TO-220AB
Plastic Package
HSMC Package Code: E
Marking:
Pb Free Mark
Pb-Free: " . " (Note)
C Normal: None H
E
0 4N60
Date Code
Control Code
K
Note: Green label is used for pb-free packing
N Pin Style: 1.Gate 2 & Tab.Drain 3.Source
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM Min. Max.
A 5.58 7.49
B 8.38 8.90
C 4.40 4.70
D 1.15 1.39
E 0.35 0.60
F 2.03 2.92
G 9.66 10.28
H - *16.25
I - *3.83
J 3.00 4.00
K 0.75 0.95
L 2.54 3.42
M 1.14 1.40
N - *2.54
O 12.70 14.27
P 14.48 15.87
*: Typical, Unit: mm
TO-220FP Dimension
A
α1
D
α2 α3
α4
α5
EO
C
G
F
M
I
3
2
1
N
L
J
K
3-Lead TO-220FP
Plastic Package
HSMC Package Code: F
Marking:
Pb Free Mark
Pb-Free: " . " (Note)
Normal: None
H
0 4N60
F
Date Code
Control Code
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
Material:
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
C
D
E
F
G
I
J
K
L
M
N
O
α1/2/4/5
α3
Min.
6.48
4.40
2.34
0.45
9.80
3.10
2.70
0.60
2.34
12.48
15.67
0.90
2.00
-
-
Max.
7.40
4.90
3.00
0.80
10.36
3.60
3.43
1.00
2.74
13.60
16.20
1.47
2.96
*5o
*27o
*: Typical, Unit: mm
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
H04N60E, H04N60F
HSMC ProdwuwctwS.pDeactiafiSchaetieotn4U.net

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H04N60

N-Channel Power Field Effect Transistor

Hi-Sincerity Mocroelectronics
Hi-Sincerity Mocroelectronics

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