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K9WAG08U1D 데이터시트 PDF




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기능 4Gb D-die NAND Flash
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K9WAG08U1D 데이터시트, 핀배열, 회로
www.DataSheet4U.net
Rev.0.2, May. 2010
K9F4G08U0D
K9K8G08U0D
K9K8G08U1D
K9WAG08U1D
Advance
4Gb D-die NAND Flash
Single-Level-Cell (1bit/cell)
datasheet
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND
SPECIFICATIONS WITHOUT NOTICE.
Products and specifications discussed herein are for reference purposes only. All information discussed
herein is provided on an "AS IS" basis, without warranties of any kind.
This document and all information discussed herein remain the sole and exclusive property of Samsung
Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property
right is granted by one party to the other party under this document, by implication, estoppel or other-
wise.
Samsung products are not intended for use in life support, critical care, medical, safety equipment, or
similar applications where product failure could result in loss of life or personal or physical harm, or any
military or defense application, or any governmental procurement to which special terms or provisions
may apply.
For updates or additional information about Samsung products, contact your nearest Samsung office.
All brand names, trademarks and registered trademarks belong to their respective owners.
2010 Samsung Electronics Co., Ltd. All rights reserved.
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K9WAG08U1D pdf, 반도체, 판매, 대치품
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K9F4G08U0D K9K8G08U1D
K9K8G08U0D K9WAG08U1D
datasheet
Advance Rev. 0.2
FLASH MEMORY
1.0 INTRODUCTION
1.1 General Description
Offered in 512Mx8bit, the K9F4G08U0D is a 4G-bit NAND Flash Memory with spare 128M-bit. The device is offered in 3.3V Vcc. Its NAND cell provides
the most cost-effective solution for the solid state application market. A program operation can be performed in typical 250μs on the (2K+64)Byte page
and an erase operation can be performed in typical 2ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per Byte.
The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase
functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage
of the K9F4G08U0Ds extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.
The K9F4G08U0D is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requir-
ing non-volatility.
1.2 Features
Voltage Supply
- 3.3V Device(K9F4G08U0D) : 2.7V ~ 3.6V
Organization
- Memory Cell Array : (512M + 16M) x 8bit
- Data Register : (2K + 64) x 8bit
Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
Page Read Operation
- Page Size : (2K + 64)Byte
- Random Read : 25μs(Max.)
- Serial Access : 25ns(Min.)
Fast Write Cycle Time
- Page Program time : 250μs(Typ.)
- Block Erase Time : 2ms(Typ.)
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
- ECC Requirement : 1bit/528Byte
- Endurance & Data Retention : Please refer to the qualification report
Command Register Operation
Unique ID for Copyright Protection
Package :
- K9F4G08U0D-SCB0/SIB0 : Pb-FREE, Halogen-FREE PACKAGE
48 - Pin TSOP1 (12 x 20 / 0.5 mm pitch)
- K9K8G08U0D-SCB0/SIB0 : Pb-FREE, Halogen-FREE PACKAGE
48 - Pin TSOP1 (12 x 20 / 0.5 mm pitch)
- K9K8G08U1D-SCB0/SIB0 : Pb-FREE, Halogen-FREE PACKAGE
48 - Pin TSOP1 (12 x 20 / 0.5 mm pitch)
- K9WAG08U1D-SCB0/SIB0 : Pb-FREE, Halogen-FREE PACKAGE
48 - Pin TSOP1 (12 x 20 / 0.5 mm pitch)
1.3 PRODUCT LIST
Part Number
K9F4G08U0D-S
K9K8G08U0D-S
K9K8G08U1D-S
K9WAG08U1D-S
Vcc Range
2.70 ~ 3.60V
Organization
X8
PKG Type
TSOP1
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K9F4G08U0D K9K8G08U1D
K9K8G08U0D K9WAG08U1D
datasheet
Advance Rev. 0.2
FLASH MEMORY
1.6 Pin Description
Pin Name
I/O0 ~ I/O7
Pin Function
DATA INPUTS/OUTPUTS
The I/O pins are used to input command, address and data, and to output data during read operations. The I/O pins float to
high-z when the chip is deselected or when the outputs are disabled.
COMMAND LATCH ENABLE
CLE The CLE input controls the activating path for commands sent to the command register. When active high, commands are
latched into the command register through the I/O ports on the rising edge of the WE signal.
ADDRESS LATCH ENABLE
ALE The ALE input controls the activating path for address to the internal address registers. Addresses are latched on the rising
edge of WE with ALE high.
CHIP ENABLE
CE The CE input is the device selection control. When the device is in the Busy state, CE high is ignored, and the device does not
return to standby mode in program or erase operation.
READ ENABLE
RE The RE input is the serial data-out control, and when active drives the data onto the I/O bus. Data is valid tREA after the fall-
ing edge of RE which also increments the internal column address counter by one.
WE
WRITE ENABLE
The WE input controls writes to the I/O port. Commands, address and data are latched on the rising edge of the WE pulse.
WRITE PROTECT
WP The WP pin provides inadvertent program/erase protection during power transitions. The internal high voltage generator is
reset when the WP pin is active low.
READY/BUSY OUTPUT
R/B
The R/B output indicates the status of the device operation. When low, it indicates that a program, erase or random read oper-
ation is in process and returns to high state upon completion. It is an open drain output and does not float to high-z condition
when the chip is deselected or when outputs are disabled.
Vcc
POWER
VCC is the power supply for device.
Vss GROUND
N.C
NO CONNECTION
Lead is not internally connected.
NOTE :
Connect all VCC and VSS pins of each device to common power supply outputs.
Do not leave VCC or VSS disconnected.
-7-

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관련 데이터시트

부품번호상세설명 및 기능제조사
K9WAG08U1A

(K9xxG08UxA) 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory

Samsung semiconductor
Samsung semiconductor
K9WAG08U1D

4Gb D-die NAND Flash

Samsung
Samsung

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