PDF PH2520U Data sheet ( Hoja de datos )

Número de pieza	PH2520U
Descripción	N-channel TrenchMOS ultra low level FET
Fabricantes	NXP Semiconductors
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No Preview Available ! www.DataSheet4U.net PH2520U N-channel TrenchMOS ultra low level FET Rev. 03 — 2 March 2009 Product data sheet 1. Product profile 1.1 General description Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Higher operating power due to low thermal resistance Interfaces directly with low voltage gate drivers Low conduction losses due to low on-state resistance 1.3 Applications DC-to-DC convertors Notebook computers Portable equipment Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C ID drain current Tmb = 25 °C; VGS = 4.5 V; see Figure 1; see Figure 3 Ptot total power dissipation Tmb = 25 °C; see Figure 2 Dynamic characteristics QGD gate-drain charge VGS = 4.5 V; ID = 50 A; VDS = 10 V; Tj = 25 °C; see Figure 11; see Figure 12 Static characteristics RDSon drain-source on-state resistance VGS = 4.5 V; ID = 25 A; Tj = 25 °C; see Figure 9; see Figure 10 Min Typ Max Unit - - 20 V - - 100 A - - 62.5 W - 18 - nC - 2.1 2.7 mΩ 1 page www.DataSheet4U.net NXP Semiconductors PH2520U N-channel TrenchMOS ultra low level FET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Static characteristics V(BR)DSS VGS(th) drain-source breakdown voltage gate-source threshold voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C ID = 250 µA; VGS = 0 V; Tj = 25 °C ID = 1 mA; VDS = VGS; Tj = -55 °C; see Figure 7; see Figure 8 ID = 1 mA; VDS = VGS; Tj = 150 °C; see Figure 7; see Figure 8 ID = 1 mA; VDS = VGS; Tj = 25 °C; see Figure 7; see Figure 8 IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance VDS = 20 V; VGS = 0 V; Tj = 25 °C VDS = 20 V; VGS = 0 V; Tj = 150 °C VGS = 10 V; VDS = 0 V; Tj = 25 °C VGS = -10 V; VDS = 0 V; Tj = 25 °C VGS = 2.5 V; ID = 25 A; Tj = 25 °C; see Figure 9; see Figure 10 VGS = 4.5 V; ID = 25 A; Tj = 150 °C; see Figure 9; see Figure 10 VGS = 4.5 V; ID = 25 A; Tj = 25 °C; see Figure 9; see Figure 10 RG internal gate resistance f = 1 MHz; Tj = 25 °C (AC) Dynamic characteristics QG(tot) QGS QGD VGS(pl) total gate charge gate-source charge gate-drain charge gate-source plateau voltage ID = 50 A; VDS = 10 V; VGS = 4.5 V; Tj = 25 °C; see Figure 11; see Figure 12 ID = 50 A; VDS = 10 V; Tj = 25 °C; see Figure 11; see Figure 12 Ciss Coss Crss input capacitance output capacitance reverse transfer capacitance VDS = 10 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C; see Figure 13 td(on) turn-on delay time tr rise time td(off) turn-off delay time tf fall time Source-drain diode VDS = 10 V; RL = 1 Ω; VGS = 4.5 V; RG(ext) = 4.7 Ω; Tj = 25 °C VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; see Figure 14 trr reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 20 V; Tj = 25 °C Min Typ Max Unit 18 - 20 - -- -V -V 1.2 V 0.25 - - V 0.45 0.7 0.95 V - 0.06 1 µA - - 500 µA - 20 100 nA - 20 100 nA - 2.8 3.9 mΩ - 3.3 4.3 mΩ - 2.1 2.7 mΩ - 1.65 - Ω - 78 - nC - 17 - nC - 18 - nC - 2.2 - V - 5850 - pF - 1190 - pF - 831 - pF - 34 - ns - 240 - ns - 318 - ns - 234 - ns - 0.85 1.2 V - 65 - ns PH2520U_3 Product data sheet Rev. 03 — 2 March 2009 © NXP B.V. 2009. All rights reserved. 5 of 12 5 Page www.DataSheet4U.net NXP Semiconductors PH2520U N-channel TrenchMOS ultra low level FET 9. Legal information 9.1 Data sheet status Document status [1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 9.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 9.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — is a trademark of NXP B.V. 10. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PH2520U_3 Product data sheet Rev. 03 — 2 March 2009 © NXP B.V. 2009. All rights reserved. 11 of 12 11 Page

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