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Número de pieza | TLP363JF | |
Descripción | GaAs Ired & Photo-Triac | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
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TOSHIBA Photocoupler GaAs Ired & Photo-Triac
TLP363JF
Triac Drivers
Programmable Controllers
AC-Output Modules
Solid State Relays
TLP363JF
Unit in mm
The TOSHIBA TLP363JF consists of a zero-voltage-crossing turn-on
photo-triac optically coupled to a gallium arsenide infrared-emitting diode in
a four-lead plastic DIP package.
This product has a greater capacity to withstand external noise than the
TLP361JF.
Absolute maximum ratings and electrical characteristics are the same as
those given in the TLP363J technical data sheets.
• Peak off-state voltage: 600 V (min)
• Trigger LED current: 10 mA (max)
• On-state current: 100 mA (max)
• Isolation voltage: 5000 Vrms (min)
•Zero crossing function
• UL recognized: UL1577, file No. E67349
JEDEC
TOSHIBA
Weight: 0.26 g
•Option (D4) type
TÜV approved: DIN EN60747-5-2
Certificate No. R50033433
Maximum operating insulation voltage : 1140 Vpk
Maximum permissible overvoltage
: 8000 Vpk
(Note) When an EN60747-5-2 approved type is needed, please designate “Option (D4).”
―
11-5B202
•Construction mechanical rating
10.16 mm pitch
Creepage distance
Clearance
Insulation thickness
8.0 mm (min)
8.0 mm (min)
0.4 mm (min)
•Trigger LED current
Classi−
fication*
Trigger LED current (mA)
VT = 3 V, Ta = 25°C
Min. Max.
Standard
―
10
Marking of
classification
blank
Pin Configuration (top view)
1 4 1: ANODE
2: CATHODE
2
ZC
3
3: TERMINAL1
4: TERMINAL2
(Note) When specifying the application type name for certification testing, be sure to use the standard product
type name, e.g.,
TLP363JF
1 2007-10-01
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet TLP363JF.PDF ] |
Número de pieza | Descripción | Fabricantes |
TLP363J | GaAs Ired & Photo-Triac Photocoupler | Toshiba Semiconductor |
TLP363JF | GaAs Ired & Photo-Triac | Toshiba Semiconductor |
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