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PDF SUU50N10-18P Data sheet ( Hoja de datos )
| Número de pieza | SUU50N10-18P | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Vishay Siliconix | |
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SUU50N10-18P
Vishay Siliconix
N-Channel 100-V (D-S), 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
100 0.0185 at VGS = 10 V
ID (A)a
50
Qg (Typ.)
48 nC
TO-251
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
APPLICATIONS
• Primary Side Switch
• Isolated DC/DC Converter
RoHS
COMPLIANT
D
Drain Connected to
Drain-Tab
GDS
Top View
Ordering Information: SUU50N10-18P-E3 (Lead (Pb)-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
TC = 25 °C
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 100 °C
TA = 25 °C
ID
TA = 100 °C
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
IS
IAS
EAS
Maximum Power Dissipation
TC = 100 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 100 °C
TJ, Tstg
Limit
100
± 20
50a
39
8.2b
5.8b
100
50a
2.0b
45
101
136.4
68.2
3.0b
1.5b
- 55 to 175
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb
Maximum Junction-to-Case
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
Steady State
Steady State
Document Number: 68817
S-81956-Rev. B, 25-Aug-08
Symbol
RthJA
RthJC
Typical
40
0.85
Maximum
50
1.1
Unit
°C/W
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1000
1000
SUU50N10-18P
Vishay Siliconix
100 Limited
by RDS(on)*
10 µs, 100 µs
10
1 ms
1 10 ms
100 ms
0.1 TA = 25 °C
Single Pulse
1s
10 s
100 s, DC
0.01
0.1
1.0
10 100 1000
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
10
8
6
4
2
0
0 25 50 75 100 125 150 175
TA - Ambient Temperature (°C)
Current Derating**, Junction-to-Ambient
100 Limited
by RDS(on)*
10
1
10 µs,
100 µs
1 ms
10 ms
100 ms, DC
0.1 TC = 25 °C
Single Pulse
0.01
0.1
1.0
10 100 1000
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
60
50
Package Limited
40
30
20
10
0
0 25 50 75 100 125 150 175
TC - Case Temperature (°C)
Current Derating**, Junction-to-Case
** The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68817
S-81956-Rev. B, 25-Aug-08
www.vishay.com
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SUU50N10-18P.PDF ] | |
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