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부품번호 | H50N03E 기능 |
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기능 | N-Channel Enhancement-Mode MOSFET | ||
제조업체 | Hi-Sincerity Mocroelectronics | ||
로고 | |||
www.DataSheet4U.net
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200519
Issued Date : 2005.12.01
Revised Date : 2005.12.16
Page No. : 1/5
H50N03E
N-Channel Enhancement-Mode MOSFET (25V, 50A)
Features
• RDS(on)=11mΩ@VGS=10V, ID=30A
• RDS(on)=18mΩ@VGS=4.5V, ID=30A
• Advanced trench process technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for DC/DC Converters and Motor Drivers
• Fully Characterized Avalanche Voltage and Current
• Improved Shoot-Through FOM
H50N03E Pin Assignment
Tab
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3
2
1
Internal Schematic
Diagram
G
D
S
Maximum Ratings & Thermal Characteristics
(TA=25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current *1
Maximum Power Dissipation @ TC=25oC
Operating Junction and Storage Temperature Range
Avalanche Energy with Single Pulse
ID=35A, VDD=20V, L=0.14mH
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance(PCB mounted)*2
*1: Maximum DC current limited by the package.
*2: 1-in2 2oz Cu PCB board
VDS
VGS
ID
IDM
PD
TJ,Tstg
EAS
RθJC
RθJA
Value
25
±20
50
200
70
-55 to 150
300
2.1
55
Units
V
V
A
A
W
oC
mJ
OC/W
OC/W
Switching
Test Circuit
VDD
VGEN
VIN
RG G
D
S
VOUT
Switching
Waveforms
td(on)
ton
tr td(off)
90%
toff
tf
90 %
Output, VOUT
Input, VIN 10%
10%
10%
Inverted
90%
50% 50%
Pulse Width
H50N03E
HSMC Product Specification
www.DataSheet4U.net
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200519
Issued Date : 2005.12.01
Revised Date : 2005.12.16
Page No. : 4/5
TO-220AB Dimension
A
D
B
E
F
H
I
G
Tab
P
L
3
2
1
M
O
J
3-Lead TO-220AB
Plastic Package
HSMC Package Code: E
Marking:
Pb Free Mark
Pb-Free: " . " (Note)
C Normal: None H
E
5 0N03
Date Code
Control Code
K
Note: Green label is used for pb-free packing
N Pin Style: 1.Gate 2 & Tab.Drain 3.Source
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM Min. Max.
A 5.58 7.49
B 8.38 8.90
C 4.40 4.70
D 1.15 1.39
E 0.35 0.60
F 2.03 2.92
G 9.66 10.28
H - *16.25
I - *3.83
J 3.00 4.00
K 0.75 0.95
L 2.54 3.42
M 1.14 1.40
N - *2.54
O 12.70 14.27
P 14.48 15.87
*: Typical, Unit: mm
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
H50N03E
HSMC Product Specification
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부품번호 | 상세설명 및 기능 | 제조사 |
H50N03E | N-Channel Enhancement-Mode MOSFET | Hi-Sincerity Mocroelectronics |
H50N03J | N-Channel Enhancement-Mode MOSFET | Hi-Sincerity Mocroelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |