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2SB1375 PDF 데이터시트 ( Data , Function )

부품번호 2SB1375 기능
기능 SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR
제조업체 Toshiba Semiconductor
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2SB1375 데이터시트, 핀배열, 회로
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SB1375
Audio Frequency Power Amplifier
2SB1375
Unit: mm
Low saturation voltage: VCE (sat) = 1.5 V (max)
(IC = 2 A, IB = 0.2 A)
High power dissipation: PC = 25 W (Tc = 25°C)
Collector metal (fin) is covered with mold resin
Complementary to 2SD2012
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
60
60
7
3
0.5
2.0
25
150
55 to 150
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2006-11-21




2SB1375 pdf, 반도체, 판매, 대치품
100
(1) Ta = 25°C No heat sink
(2) Tc = 25°C Infinite heat sink
30
10
rth – tw
3
1
0.3
0.001
0.01
0.1 1
Pulse width tw (s)
2SB1375
(1)
(2)
10 100
Safe Operating Area
10
IC max (pulsed)*
5
IC max (continuous)
3
10 ms*
100 ms*
1 ms*
1 DC operation
Tc = 25°C
0.5
*: Single nonrepetitive
0.3 pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
0.1
1 3 5
10
VCEO max
30 50
100 200
Collector-emitter voltage VCE (V)
PC – Ta
25
(1) Tc = Ta
Infinite heat sink
(1) (2) No heat sink
20
15
10
5
(2)
0
0 25 50 75 100 125 150 175
Ambient temperature Ta (°C)
4 2006-11-21

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전력 반도체 판매 ( IGBT, TR 모듈, SCR, 다이오드 모듈 )

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