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Número de pieza | 4N60 | |
Descripción | 600Volts N-Channel MOSFET | |
Fabricantes | Estek Electronics | |
Logotipo | ||
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4 Amps,600Volts
N-Channel MOSFET
■ Description
The ET4N60 N-Channel enhancement mode silicon gate power MOSFET is
designed for high voltage, high speed power switching
applications such as switching regulators, switching converters,
solenoid, motor drivers, relay drivers.
■ Features
RDS(ON) =2.50Ω@VGS = 10 V
Low gate charge ( typical 16nC)
High ruggedness
Fast switching capability
Avalanche energy specified
Improved dv/dt capability
■ Symbol
4N60
■ Absolute Maximum Ratings(Tc=25℃,unless otherwise specified)
Parameter
Symbol
TO-220
Ratings
TO-220F
TO-252
Drain-Source Voltage
Gate-Source Voltage
Drain Currenet
Continuous
Tc=25℃
Tc=100℃
VDSS
VGSS
ID
600
±30
4.0 4.0*
2.4 2.4*
2.8
1.8
Drain Current Pulsed
(Note 1)
IDP
16 16* 11.2
Avalanche Energy
Repetitive
Single Pulse
(Note 1)
(Note 2)
Peak Diode Recovery dv/dt
(Note 3)
Total Power Dissipation
Tc=25℃
Derate above 25℃
EAR
EAS
dv/dt
PD
10.4
180
4.5
104 34
0.83 0.27
4.9
210
49
0.39
Units
V
V
A
A
A
mJ
mJ
V/ns
W
W/℃
1 BEIJING ESTEK ELECTRONICS CO.,LTD
1 page www.DataSheet4U.net
■ Typical Characteristics (Continued)
4N60
Figure 11-1. Transient Thermal Response Curve TO220
Figure 11-2. Transient Thermal Response Curve for TO220F
Figure 11-3. Transient Thermal Response Curve for TO252
5 BEIJING ESTEK ELECTRONICS CO.,LTD
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet 4N60.PDF ] |
Número de pieza | Descripción | Fabricantes |
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