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PDF BTS7904B Data sheet ( Hoja de datos )
| Número de pieza | BTS7904B | |
| Descripción | OptiMOS -T PN Half Bridge | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BTS7904B (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
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OptiMOS® -T PN Half Bridge
Features
• Dual p- and n-channel MOSFET
• Automotive AEC Q101 qualified
• Green package (RoHS compliant)
• Ultra low R DS(on)
• 150 °C operating temperature
Product Summary
V DS
R
5)
DS(on),max
ID
BTS7904B
PN
-30 55 V
12.7 11.7 mΩ
-40 40 A
PG-TO263-5-1
Type
BTS7904B
Package
PG-TO263-5-1
Marking
7904B
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current1)
Pulsed drain current2)
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
Power dissipation2)
ID
I D,pulse
E AS
IAS
V GS
P tot
T C=25 °C
T C=100 °C
T C=25 °C
I D=±20 A
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
PN
-40 40
Unit
A
-40 40
-160
160
350 200 mJ
-40 40 A
-16 / +5 +16 / -163) V
96 69 W
-55 ... 150
°C
55/150/56
1.0
page 1
2008-07-18
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
1 Power dissipation (P)
P tot=f(T C), V GS≥6 V
100
2 Power dissipation (N)
P tot=f(T C), V GS≥6 V
80
BTS7904B
80
60
60
40
40
20
20
0
0 20 40 60 80 100 120 140 160
T C [°C]
0
0 20 40 60 80 100 120 140 160
T C [°C]
3 Drain current (P)
I D=f(T C)
parameter: V GS≥6 V
45
4 Drain current (N)
I D=f(T C)
parameter: V GS≥6 V
45
40 40
35 35
30 30
25 25
20 20
15 15
10 10
55
0
0 20 40 60 80 100 120 140 160
T C [°C]
0
0 20 40 60 80 100 120 140 160
T C [°C]
1.0
page 5
2008-07-18
Datasheet pdf - http://www.DataSheet4U.net/
5 Page 
www.DataSheet.co.kr
25 Typ. gate charge (P)
V GS=f(Q gate); I D=-40 A pulsed
parameter: V DD
12
26 Typ. gate charge (N)
V GS=f(Q gate); I D=40 A pulsed
parameter: V DD
12
BTS7904B
10 -6 V 10 11 V
-24 V
44 V
88
66
44
22
0
0 20 40 60 80
-Q gate [nC]
27 Drain-source breakdown voltage (P)
V BR(DSS)=f(T j); I D=-1 mA
0
100 0 20 40 60 80
Q gate [nC]
28 Drain-source breakdown voltage (N)
V BR(DSS)=f(T j); I D=1 mA
100
38
36
34
32
30
28
26
24
22
20
-60 -20 20 60 100 140
T j [°C]
70
65
60
55
50
45
40
35
30
-60 -20 20 60 100 140
T j [°C]
1.0
page 11
2008-07-18
Datasheet pdf - http://www.DataSheet4U.net/
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet BTS7904B.PDF ] | |
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