|
|
PDF BTS7904S Data sheet ( Hoja de datos )
| Número de pieza | BTS7904S | |
| Descripción | OptiMOS -T PN Half Bridge | |
| Fabricantes | Infineon Technologies | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BTS7904S (archivo pdf) en la parte inferior de esta página. Total 13 Páginas | ||
|
No Preview Available !
www.DataSheet.co.kr
OptiMOS® -T PN Half Bridge
Features
• Dual p- and n-channel MOSFET
• Automotive AEC Q101 qualified
• Green package (RoHS compliant)
• Ultra low R DS(on)
• 150 °C operating temperature
Product Summary
V DS
R DS(on),max
ID
BTS7904S
PN
-30 55 V
13 12 mΩ
-40 40 A
PG-TO220-5-13
Type
BTS7904S
Package
PG-TO220-5-13
Marking
7904S
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current1)
Pulsed drain current2)
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
Power dissipation2)
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I D T C=25 °C
T C=100 °C
I D,pulse T C=25 °C
E AS I D=±20 A
IAS
V GS
P tot T C=25 °C
T j, T stg
Value
PN
-40 40
Unit
A
-40 40
-160
160
350 200 mJ
-40 40 A
-16 / +5 +16 / -163) V
96 69 W
-55 ... 150
°C
55/150/56
1.0
page 1
2008-07-08
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
1 Power dissipation (P)
P tot=f(T C), V GS≥6 V
100
2 Power dissipation (N)
P tot=f(T C), V GS≥6 V
80
BTS7904S
80
60
60
40
40
20
20
0
0 20 40 60 80 100 120 140 160
T C [°C]
0
0 20 40 60 80 100 120 140 160
T C [°C]
3 Drain current (P)
I D=f(T C)
parameter: V GS≥6 V
45
4 Drain current (N)
I D=f(T C)
parameter: V GS≥6 V
45
40 40
35 35
30 30
25 25
20 20
15 15
10 10
55
0
0 20 40 60 80 100 120 140 160
T C [°C]
0
0 20 40 60 80 100 120 140 160
T C [°C]
1.0
page 5
2008-07-08
Datasheet pdf - http://www.DataSheet4U.net/
5 Page 
www.DataSheet.co.kr
25 Typ. gate charge (P)
V GS=f(Q gate); I D=-40 A pulsed
parameter: V DD
12
26 Typ. gate charge (N)
V GS=f(Q gate); I D=40 A pulsed
parameter: V DD
12
BTS7904S
10 -6 V 10 11 V
-24 V
44 V
88
66
44
22
0
0 20 40 60 80
-Q gate [nC]
27 Drain-source breakdown voltage (P)
V BR(DSS)=f(T j); I D=-1 mA
0
100 0 20 40 60 80
Q gate [nC]
28 Drain-source breakdown voltage (N)
V BR(DSS)=f(T j); I D=1 mA
100
38
36
34
32
30
28
26
24
22
20
-60 -20 20 60 100 140
T j [°C]
70
65
60
55
50
45
40
35
30
-60 -20 20 60 100 140
T j [°C]
1.0
page 11
2008-07-08
Datasheet pdf - http://www.DataSheet4U.net/
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet BTS7904S.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BTS7904B | OptiMOS -T PN Half Bridge | Infineon Technologies |
| BTS7904S | OptiMOS -T PN Half Bridge | Infineon Technologies |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |