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BTS7930B 데이터시트 PDF




Infineon Technologies에서 제조한 전자 부품 BTS7930B은 전자 산업 및 응용 분야에서
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부품번호 BTS7930B 기능
기능 High Current PN Half Bridge NovalithIC
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BTS7930B 데이터시트, 핀배열, 회로
D a t a S h e e t , R e v . 2 . 0 , J u n e 2 0 0 6www.DataSheet.co.kr
BTS 7930B
High Current PN Half Bridge
N o v a l i t h I C TM
30 A, 10 m+ 18 mtyp.
Automotive Power
Never stop thinking.
Datasheet pdf - http://www.DataSheet4U.net/




BTS7930B pdf, 반도체, 판매, 대치품
www.DataSheet.co.kr
High Current PN Half Bridge
BTS 7930B
Overview
1 Overview
The BTS 7930B is part of the NovalithICfamily containing three separate chips in one
package: One p-channel highside MOSFET and one n-channel lowside MOSFET
together with a driver IC, forming a fully integrated high current half-bridge. All three
chips are mounted on one common leadframe, using the chip on chip and chip by chip
technology. The power switches utilize vertical MOS technologies to ensure optimum on
state resistance. Due to the p-channel highside switch the need for a charge pump is
eliminated thus minimizing EMI. Interfacing to a microcontroller is made easy by the
integrated driver IC which features logic level inputs, diagnosis with current sense, slew
rate adjustment, dead time generation and protection against overtemperature,
overvoltage, undervoltage, overcurrent and short circuit. The BTS 7930B can be
combined with other BTS 7930B to form H-bridge and 3-phase drive configurations.
1.1 Block Diagram
BTS 7930B
HS base-chip
VS
Top-chip
IN Gate Driver
Dead Time Gen.
INH
Slew Rate Adj.
UV Shut Down
OV Lock Out
SR Current Lim.
Diagnosis
IS Current Sense
Figure 1 Block Diagram
OUT
LS base-chip
GND
Data Sheet
3 Rev. 2.0, 2006-06-01
Datasheet pdf - http://www.DataSheet4U.net/

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BTS7930B 전자부품, 판매, 대치품
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High Current PN Half Bridge
BTS 7930B
Maximum Ratings
3 Maximum Ratings
-40 °C < Tj < 150 °C (unless otherwise specified)
Pos Parameter
Symbol Limits Unit
min max
Electrical Maximum Ratings
3.0.1 Supply voltage
3.0.2 Logic Input Voltage
3.0.3
3.0.4
HS/LS continuous drain
current
HS/LS pulsed drain
current
VVS
VIN
VINH
ID(HS)
ID(LS)
ID(HS)
ID(LS)
-0.3 45 V
-0.3 5.3 V
-20 201) A
-50 501) A
3.0.5 HS/LS PWM current
ID(HS)
ID(LS)
-26 261) A
-28 281) A
3.0.6
3.0.7
Voltage at SR pin
VSR -0.3
Voltage between VS and VVS -VIS -0.3
IS pin
1.0
45
V
V
3.0.8 Voltage at IS pin
Thermal Maximum Ratings
3.0.9 Junction temperature
3.0.10 Storage temperature
VIS
Tj
Tstg
-20 45 V
-40 150 °C
-55 150 °C
ESD Susceptibility
3.0.11 ESD susceptibility HBM VESD
kV
IN, INH, SR, IS
OUT, GND, VS
-2 2
-4 4
Test Condition
TC < 85°C
switch active
TC < 85°C
tpulse = 10ms
single pulse
TC < 85°C
f = 1kHz, DC = 50%
TC < 85°C
f = 20kHz, DC = 50%
according to EIA/
JESD 22-A 114B
1) Maximum reachable current may be smaller depending on current limitation level
Note: Maximum ratings are absolute ratings; exceeding any one of these values may
cause irreversible damage to the device. Exposure to maximum rating conditions
for extended periods of time may affect device reliability
Data Sheet
6 Rev. 2.0, 2006-06-01
Datasheet pdf - http://www.DataSheet4U.net/

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부품번호상세설명 및 기능제조사
BTS7930B

High Current PN Half Bridge NovalithIC

Infineon Technologies
Infineon Technologies

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