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PDF 2SB1537 Data sheet ( Hoja de datos )
| Número de pieza | 2SB1537 | |
| Descripción | Silicon PNP epitaxial planer typeFor low-frequency amplification) | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SB1537
Silicon PNP epitaxial planer type
For low-frequency amplification
Complementary to 2SD2357
Unit: mm
s Features
q Low collector to emitter saturation voltage VCE(sat).
q Large collector power dissipation PC.
q Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–10
V
Collector to emitter voltage VCEO
–10
V
Emitter to base voltage
VEBO
–5
V
Peak collector current
ICP
–1.2 A
Collector current
IC
–1 A
Collector power dissipation PC* 1 W
Junction temperature
Tj
150 ˚C
Storage temperature
Tstg –55 ~ +150 ˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
4.5±0.1
1.6±0.2
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
1.5±0.1
0.4±0.04
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol : 1L
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
VCBO
VCEO
VEBO
hFE
VCE(sat)
fT
Cob
Conditions
VCB = –7V, IE = 0
IC = –10µA, IE = 0
IC = –1mA, IB = 0
IE = –10µA, IC = 0
VCE = –2V, IC = –100mA**
IC = –500mA, IB = –5mA**
VCB = –5V, IE = 50mA, f = 200MHz
VCB = –5V, IE = 0, f = 1MHz
min
–10
–10
–5
200
typ max Unit
–1 µA
V
V
V
800
– 0.15 V
120 MHz
45 pF
** Pulse measurement
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SB1537.PDF ] | |
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